BC817-16-7

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The BC817-16-7 is a small signal NPN bipolar junction transistor (BJT) designed for use in low-voltage, low-power configurations. It’s a general-purpose device that can be employed for a wide range of analog amplifier and switching applications.

The transistor has several leads that protrude from its package. These include the collector (C) lead, the emitter (E) lead, and the base (B) lead. The collector lead is typically the largest lead and it provides the pathway for current flow into or out of the transistor. The emitter lead is smaller than the collector lead and provides the second terminal for the current flow. The base lead is the smallest lead and is functionally connected to the emitter lead.

The BC817-16-7 has a maximum collector current (Ic) of 100 mA, and a maximum Collector-Emitter Saturation Voltage (Vce(sat)) of 0.2V. It can withstand a maximum Collector-Base Voltage (Vcb) of 20V, and a maximum Emitter-Base Voltage (Veb) of 5V. It has a maximum collector-emitter voltage (Vce) of 20V, and a maximum collector power dissipation (Pc) of 625mW. It has a Vceo of 30V, a beta (hfe) of 30-300, and hfe9 of 10-100.

The BC817-16-7 is commonly used in low voltage, low-power applications, such as switching circuits, analog amplifiers, remote control receivers, and other consumer electronics. It is also widely used in general-purpose switch applications, such as digital switches, transistors, and multiplexers. Additionally, it is commonly employed in power or battery-operated circuits and systems.

The working principle of the BC817-16-7 is based on the basic operation of a BJT. When the base voltage is increased, the electrons from the emitter are attracted to the base of the transistor, leaving an immobile “space charge” behind in the collector. This results in an increase in current flow from the collector to the emitter (collector current). The depletion layer that forms around the base of the transistor also acts as an insulator, reducing the amount of current that can flow from the collector to the emitter.

To alter the amount of collector current that flows through the transistor, the base voltage can be used to manipulate the size of the depletion layer. A higher base voltage will reduce the size of the depletion layer and allow more collector current to flow, while a lower base voltage will increase the size of the depletion layer, which limits the amount of collector current. This is how the BC817-16-7 can be used as an amplifier or switch in various applications.

In summary, the BC817-16-7 is a small signal NPN bipolar junction transistor that is typically employed in low-voltage, low-power applications. It has several leads that protrude from its package and it features a maximum collector current of 100 mA, and a maximum Collector-Emitter Saturation Voltage of 0.2V. The working principle of the BC817-16-7 is based on the basic operation of a BJT, and it can be used as an amplifier or switch in various applications.

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