BC818-40LT1

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BC818-40LT1 is a transistor that is categorized as Single Bipolar (BJT). It is mainly used in low-voltage and low-power applications, such as switching, amplifying, and interfacing applications. It is well-suited for low-noise and low-power amplifiers in portable radios, pagers and cellular phones. The device features a small signal current gain of about 5.6 dB and a maximum current gain of about 660.

The BC818-40LT1 is a NPN transistor with a Collector-Emitter breakdown voltage of -30V. It has a collector current of -60mA and a maximum collector-base voltage of -50V. It has a current gain-bandwidth product of 50 MHz and a base-emitter voltage of 5V. The device has a collector-emitter saturation voltage of -0.2V and a collector-emitter voltage drop of -20V. Additionally, it has a high transition frequency of 200MHz.

The BC818-40LT1 is a moderately low-cost transistor. Upon being exposed to impurities or foreign matter, it typically retains its electrical characteristics and remains in original condition. The device has a standard package and is easily mounted, making it ideal for use in a wide range of applications. Its low-noise characteristics are especially ideal for applications such as cellular phones and pagers.

The working principle of the BC818-40LT1 is that the current flowing through the emitter-collector junction (IC) will be controlled by the voltage applied to the base-emitter junction (VBE). This transistor is usually engaged or activated when the applied base voltage (VBE) is greater than 0.7V. When VBE is less than 0.7V, the transistor is usually in its off state. The current amplification of this transistor is determined by its beta (β) of 100 to 660.

In summary, the BC818-40LT1 is a single bipolar transistor that is well-suited for low-noise and low-power applications because of its low-voltage and low-power ratings. It is also highly reliable and cost efficient. This transistor is mainly used for switching, amplifying and interfacing applications. The working principle of this device is that current flowing through the emitter-collector junction (IC) will be controlled by the voltage applied to the base-emitter junction (VBE).

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