BC817-16 Allicdata Electronics

BC817-16 Discrete Semiconductor Products

Allicdata Part #:

BC817-16DITR-ND

Manufacturer Part#:

BC817-16

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 45V 0.8A SOT23-3
More Detail: Bipolar (BJT) Transistor NPN 45V 800mA 100MHz 310m...
DataSheet: BC817-16 datasheetBC817-16 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 310mW
Frequency - Transition: 100MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: BC817
Description

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The BC817-16 is a NPN switching bipolar transistor with a wide range of applications which are mainly related to general digital switch functions. It is manufactured in a small SOT-23 package, making it suitable for many circuit designs. This article will cover the applications and working principle of the BC817-16.

Applications Of The BC817-16

The BC817-16 is primarily used in applications requiring low-level switching, low power consumption, and high accuracy. Common applications include:

  • Switch mode power supplies
  • Bidirectional interface relays
  • H-Bridge drivers
  • On-off power control
  • Voltage level shifters
  • Power buzzers
  • LEDs

The BC817-16 also features a low voltage rating of 16V, making it suitable for use in low-voltage applications. Additionally, its small form-factor allows it to be placed in tight spaces, which makes it ideal for PCB designs with a limited real estate.

Working Principle Of The BC817-16

The BC817-16 is a NPN bipolar transistor that operates using a base-emitter voltage (VBE) and a collector-emitter voltage (VCE). It has a maximum Collector-emitter breakdown voltage (BVceo) of 16V, and a low collector-emitter saturation voltage (VCEsat) of 0.3V, which reduces power dissipation. Additionally, the BC817-16 has a low leakage current of 0.2uA and can be used for low-level switching.

To operate the BC817-16, a small Base-emitter voltage (VBE) of 0.7V must first be applied to the base. This establishes a current flow between the emitter and collector of the transistor, creating a potential difference across the collector-emitter junctions. As the base-emitter voltage (VBE) increases, the collector-emitter current (Ic) increases linearly. This allows the transistor to be used as an amplifier or switch.

The BC817-16 is capable of handling up to a maximum Collector-emitter current (Ic) of 100mA, which makes it suitable for a variety of switching applications. Additionally, the transistor has a Collector-base breakdown voltage (BVcb) of 20V, which is useful for high-voltage switching. Its output characteristics are linear and can be described as an exponential function allowing for easy control.

Conclusion

The BC817-16 is a NPN bipolar transistor with a wide range of applications. It has a low voltage rating and a low collector-emitter saturation voltage, making it suitable for low-power applications. The transistor operates via a base-emitter voltage and has a maximum Collector-emitter breakdown voltage of 16V, allowing for a wide range of switching applications. Additionally, its small form-factor makes it ideal for applications with limited real estate.

The specific data is subject to PDF, and the above content is for reference

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