Allicdata Part #: | BC847STR-ND |
Manufacturer Part#: |
BC847S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2NPN 45V 0.2A SC70-6 |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 20... |
DataSheet: | BC847S Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 110 @ 2mA, 5V |
Power - Max: | 300mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-70-6 |
Base Part Number: | BC847S |
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The BC847S array is an array of bipolar junction transistors (BJTs) used in data and communication applications. It is a pre-selected set of two interconnected NPN BJTs that are pre-selected and matched for specific performance characteristics. These characteristics include the exact on-state collector-base junction voltage (VCE) and forward current gain (hFE) that meet the requirements of data communication and switching applications. This ensures consistent performance over the lifetime of the device.
The BC847S array offers several advantages over conventional single transistors. The first advantage is higher output power, which results from the combination of two NPN transistors. This allows for a greater range of output levels to be achieved. Secondly, the BC847S array has a much lower on-state collector-base voltage, meaning less power is needed to drive the current flow from the collector to the base. Finally, the array is perfectly matched for performance characteristics, meaning less variation in device performance. This ensures repeatable and reliable performance for the lifetime of the device.
The BC847S array consists of two NPN transistors, T1 and T2, connected in an emitter-follower configuration. This configuration allows the device to switch on and off quickly, while maintaining a stable collector-base voltage. The T1 and T2 transistors are interconnected with a single base connection, allowing their operation to be synchronized to achieve greater output levels with a smaller overall device size. The combination of two transistors also provides a greater level of current gain, allowing higher current loads to be driven.
The working principle of the BC847S array is relatively simple. The two transistors are connected in series, and the base connection is shared between them. This allows the transistors to be switched on and off in unison. When the base voltage is applied, current is allowed to flow from the collector of T1 to the base of T2, and then from the collector of T2 to the base of T1. This allows for the current gain of the device, as well as the control of the on-state collector-base voltage of both transistors.
The BC847S array is an ideal device for a wide range of data and communication applications. Its pre-selected transistors offer consistent performance over the lifetime of the device, and its combination of two NPN transistors provides higher output power and a greater level of current gain. The low on-state collector-base voltage ensures that less power is needed to drive the current flow, and the synchronization of the transistors allows for quick switching and stable collector-base voltage. The working principle of the BC847S array is relatively simple, with the two transistors connected in series and a single base connection allowing them to be switched on and off in unison.
The specific data is subject to PDF, and the above content is for reference
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TRANS NPN/PNP 45V 0.1A 6DFNBipolar (BJT)...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
IC INTEGRATED CIRCUITBipolar (BJT) Trans...