BC848ALT1 Allicdata Electronics
Allicdata Part #:

BC848ALT1OSCT-ND

Manufacturer Part#:

BC848ALT1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 30V 0.1A SOT23
More Detail: Bipolar (BJT) Transistor NPN 30V 100mA 100MHz 300m...
DataSheet: BC848ALT1 datasheetBC848ALT1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Series: --
Packaging: Cut Tape (CT) 
Part Status: Obsolete
Description

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Although BC848ALT1 transistors are similar to other single transistors, such as the BC846BLT1, their applications and underlying principles differ. This article will explain the application field and working principle of the BC848ALT1 transistor.

The BC848ALT1 is a single, NPN, low-noise, surface-mount transistor. It has a minimum gain (hfe) of 145 and a maximum collector-emitter voltage (Vceo) of 65V. It is typically used in audio amplifiers, general-purpose switching, and RF circuits, such as amplifier stages, switches, and non-saturated feedback circuits.

The BC848ALT1 operates on the principle of bipolar junction transistor (BJT). A BJT is made up of two P-N junctions arranged in either an N-P-N or P-N-P configuration. The base of the bipolar transistor is connected between the emitter and collector regions, and is used to control the current flow in the device. The base current is typically much smaller than the collector and emitter currents. By varying the bias voltage, current is then allowed to flow in the BC848ALT1 and it begins to operate.

When the base-emitter junction of the BC848ALT1 is forward biased, electrons from the emitter move to the base and holes from the base move to the emitter. This causes the device to become saturated and current begins to flow from the collector to the emitter. When the base-emitter junction is reversed biased, the device turns OFF, and no current flows from the collector to the emitter.

The base of the BC848ALT1 can be biased either with a resistor or a voltage divider. When connected with a voltage divider, the input voltage is applied to the base and the collector-emitter voltage can be regulated by adjusting the resistor values. The output voltage across the collector-emitter junction of the BC848ALT1 is determined by the input voltage.

The BC848ALT1 is useful in providing amplification, and when connected in a circuit, can amplify an audio signal with very low power consumption compared to other transistors. It can be used to increase the amplitude of an audio signal, and it can also be used to increase the loading capacity of a circuit.

The BC848ALT1 is also suitable for general-purpose switching applications. It can be used to switch between circuits or for on/off control. The device can be connected to the base of an NPN transistor and used to turn the collector-emitter current on and off. It can switch circuits quickly with minimal power consumption.

The BC848ALT1 is also useful in RF circuits. It can be used as amplifier stages, switches and feedback circuits. It also has a low distortion rate, and so can produce radio-frequency signals with very low noise.

In summary, the BC848ALT1 is a single, NPN, low-noise, surface-mount transistor. It is typically used in audio amplifiers, general-purpose switching, and RF circuits. Its operating principle is based on the bipolar junction transistor (BJT), and the base of the BC848ALT1 can be biased either with a resistor or a voltage divider. With its low power consumption and high gain, the BC848ALT1 is an ideal choice for a range of audio, general-purpose, and RF applications.

The specific data is subject to PDF, and the above content is for reference

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