Allicdata Part #: | BC848B-13-FDI-ND |
Manufacturer Part#: |
BC848B-13-F |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 30V 0.1A SOT-23 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 100mA 300MHz 310m... |
DataSheet: | BC848B-13-F Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.01982 |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 450 @ 2mA, 5V |
Power - Max: | 310mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
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The BC848B-13-F is a bipolar junction transistor (BJT) in a SOT23 package. It is a single-transistor device that functions as an amplifier and can be used in various circuit applications.
The BC848B-13-F transistor is a NPN-type transistor, meaning that it is a type of three-terminal bipolar semiconductor device. As a NPN transistor, the BC848B-13-F has a positive voltage applied to its emitter, along with a negative voltage applied to its collector. This arrangement of applied voltages causes electrons to flow from the emitter to the collector, thus amplifying the signal current.
The BC848B-13-F transistor is particularly suitable for applications that require small signal amplification at relatively low frequencies. The transistor features a high gain of up to 500, making it ideal for smaller, more precise amplification work. The device’s collector-emitter voltage has a maximum rating of 40V, making it suitable for applications requiring an even greater envelope of amplification. The device’s power dissipation is low as well, meaning it can be used in less noisy circuits.
The BC848B-13-F transistor is particularly well-suited for use in RF inductive voltage amplifiers, as well as other RF amplifiers. Its high gain and small signal bandwidth makes it ideal for these types of applications, and its low power consumption further adds to its appeal. Aside from RF amplifiers, the BC848B-13-F transistor is also suitable for use in noise filtering and signal recovery applications, as well as in audio amplifiers, oscillators, and active filters.
When it comes to the working principle of the BC848B-13-F transistor, it is essentially the same as all other NPN transistors. As mentioned before, the BC848B-13-F transistor uses a positive voltage applied to its emitter, and a negative voltage applied to its collector. These voltages create a region of thin, charged, mobile electrons (which is called the base region) that is located between the collector and the emitter. This base region essentially acts as a current valve that only allows electrons to pass through it if a certain amount of voltage is applied. When this voltage reaches the threshold voltage of the device, the transistor will start to conduct, allowing electrons to flow from the emitter to the collector, creating an amplified current.
In conclusion, the BC848B-13-F is an NPN-type bipolar junction transistor that is well suited for applications that require small-signal amplification at lower frequencies. It features a high gain of up to 500, allowing it to be used for precision amplification work. The device is suitable for use in RF inductive voltage amplifiers, as well as noise filtering and signal recovery applications, as well as audio and active filters. Its working principle is the same basic concept of NPN-type transistors, which is the creation of a current valve through the application of voltages to the emitter and collector.
The specific data is subject to PDF, and the above content is for reference
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