BC847BT-7-F Discrete Semiconductor Products |
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Allicdata Part #: | BC847BT-FDITR-ND |
Manufacturer Part#: |
BC847BT-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 45V 0.1A SOT523 |
More Detail: | Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 150m... |
DataSheet: | BC847BT-7-F Datasheet/PDF |
Quantity: | 573000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 5V |
Power - Max: | 150mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-523 |
Supplier Device Package: | SOT-523 |
Base Part Number: | BC847 |
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A bipolar junction transistor (BJT) is a three-terminal semiconductor device that can be used as an amplifier or switch. One of the most widely used BJT type is BC847BT-7-F. It is a single-type, NPN BJT and it can be used in a variety of applications. In this article, we will discuss the application field and working principle of BC847BT-7-F.
BC847BT-7-F is mainly used for switching and amplification of signals. It can be used in audio frequency and digital switching applications, including switching and amplification of radio frequency and telecommunications signals. The operating frequency range for this type of transistor is from DC to 200 MHz, and it can handle up to he maximum collector dissipation of 625 mW in a bipolar configuration. Its collector-emitter breakdown voltage is 40 V, and its base-emitter saturation voltage is 1.4 V. These features make it suitable for use in low power switching and amplifier circuits.
The working principle of BC847BT-7-F is similar to other types of BJT. A BJT consists of three terminals: the emitter, base, and collector. When current is applied to the base electrode, the electrons in the base region are "injected" into the collector region. This current then flows through the external circuit connected to the collector. The base-emitter junction acts as a "valve" that controls the flow of current between the collector and emitter regions. This process is responsible for the amplification and switching actions of the BJT.
BC847BT-7-F is suitable for use in audio frequency and digital switching applications, including switching and amplification of radio frequency and telecommunications signals. It can handle up to a maximum collector dissipation of 625 mW and possesses a breakdown voltage of 40 V and a saturation voltage of 1.4 V. The BJT\'s working principle involves the injection of electrons from the base region into the collector region which in turn controls the flow of current between the collector and emitter regions. This makes it ideal for use in low power switching and amplifier circuits.
The specific data is subject to PDF, and the above content is for reference
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