BC847BV,315 Allicdata Electronics
Allicdata Part #:

1727-6385-2-ND

Manufacturer Part#:

BC847BV,315

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS 2NPN 45V 0.1A SOT666
More Detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 10...
DataSheet: BC847BV,315 datasheetBC847BV,315 Datasheet/PDF
Quantity: 88000
8000 +: $ 0.03728
16000 +: $ 0.03169
24000 +: $ 0.02982
56000 +: $ 0.02797
Stock 88000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666
Base Part Number: BC847BV
Description

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BC847BV,315 is a type of integrated transistor array manufactured by NXP Semiconductor. It is part of the BC847 family of NPN transistors. This specific transistor array type is composed of three NPN transistors in one package, effectively increasing the number of transistors capable of being used at a single time. This allows for multi-stage amplification and signal switching, among other things, which increases the versatility and capacity of the array.

The main application fields for a BC847BV,315 transistor array include signal processing, RF receiver circuits, audio amplifier circuits, and general switching applications. It is important to note that due to the high frequency capabilities of this particular transistor array, it can be used for high-speed digital signal transmission systems, especially in the radio frequency (RF) range. Additionally, given its low power consumption and wide bandwidth, it is also applicable in lower power electronics and battery-operated devices.

The BC847BV,315 has three PN junction transistors with common emitters in one package. Each transistor consists of an emitter, base and collector, as is typical of many bipolar junction transistors (BJT). These transistors are capable of being operated in either the common emitter or common collector configuration. The operating voltage range of the BC847BV,315 is between -50V and +200V, with a maximum collector current rating of 625mA. As for Collector-Emitter saturation voltage, it has a maximum of 1V.

At its most basic level, the working principle of the BC847BV,315 transistor array is that current flows from the Collector through to the Emitter, undergoing amplification and switching during the process. When the Base of the transistor is connected to a negative voltage, the current flow from the Collector to the Emitter is cut off, essentially switching the transistor off. By controlling the strength of the voltage applied to the Base, current flow can be easily adjusted.

Given its wide range of application possibilities and its ability to be used in RF applications, the BC847BV,315 is an important and versatile integrated transistor array which has become increasingly popular among both hobbyists and professional circuit designers alike. From audio amplifiers to RF receivers, this type of transistor array is highly capable and has proven to be an excellent choice for a variety of circuit applications.

The specific data is subject to PDF, and the above content is for reference

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