Allicdata Part #: | BCP5116TATR-ND |
Manufacturer Part#: |
BCP5116TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 45V 1A SOT223 |
More Detail: | Bipolar (BJT) Transistor PNP 45V 1A 150MHz 2W Surf... |
DataSheet: | BCP5116TA Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 2V |
Power - Max: | 2W |
Frequency - Transition: | 150MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | BCP51 |
Description
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BCP5116TA Application Field and Working Principle
The BCP5116TA is a type of bipolar junction transistor (BJT) commonly used in various types of electronic circuits. It is specifically manufactured by ON Semiconductor and is often utilized in medium-power components, such as audio power amplifiers and power control systems. Its structure and operation make it ideal for many medium-power applications. This article will discuss the operations of the BCP5116TA, its application field and optimum working conditions.BCP5116TA Operations
Bipolar junction transistors are composed of three layers of doped semiconductors. In the BCP5116TA, these doped layers are made of n-type, p-type and n-type semiconductors. The n-type semiconductors are composed of a larger proportions of free electrons, while the p-type semiconductors are composed of a larger proportions of electron holes, or voids. The semiconductor junction couples the two layers (n-type and p-type) together, allowing electricity to flow through them. The three layers are then connected by three terminals—the base, the collector and the emitter. The base-emitter junction will allow electrons to flow from the n-type to the p-type layer, forming a channel for electron flow. From the n-type layer, the electrons will then be forced to flow through the base and the collector terminal, allowing current to flow. By applying different amounts of power at the base terminal, the amount of current through the device can be controlled. Conversely, if the base-emitter junction is reversed (by applying a higher power supply at the emitter terminal), then current will be stopped. This is known as the cutoff operation.Uses of the BCP5116TA
The BCP5116TA is a medium-power device, which makes it ideal for a wide range of applications, such as power control systems, audio power amplifiers, communication systems and other general-purpose circuits. It is particularly suitable for applications requiring high speed operation, as the device is capable of switch operation in the range ofmicroseconds. As an audio power amplifier, the BCP5116TA can amplify small audio signals to a higher level, making them audible. It can also be used as a power control system, where it can switch on or off power to a device quickly and efficiently. Additionally, it can be employed in communication systems, as it can quickly switch between transmitting and receiving signals.Optimum Working Conditions
The BCP5116TA is designed to operate between the voltage range of 4-40 volts with a power rating of 3000 milliWatts at 25℃ (77℉). It has a maximum collector emitter voltage of 60 volts, with a current gain rating of 10-50. The device is also capable of operating at a wide range of temperatures, from 55℃ (131℉) to 150℃ (302℉). The BCP5116TA is also capable of dissipating up to 750 mW of power (at a rate of 25℃). This makes it suitable for use in a variety of devices that require medium-power outputs, such as audio amplifiers.Conclusion
The BCP5116TA is a type of bipolar junction transistor (BJT) commonly used for applications requiring medium-power output, such as audio power amplifiers and power control systems. It features a three-layer construction of n-type, p-type and n-type semiconductors, with three terminals (base, collector and emitter). The device is designed to work optimally at a voltage range of 4-40 volts and a power rating of 3000 milliWatts at 25℃ (77℉). With its high power dissipation rating of 750 mW at 25℃ (77℉) and its ability to operate at a wide range of temperatures, the BCP5116TA is an ideal choice for various types of medium-power applications.The specific data is subject to PDF, and the above content is for reference
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