Allicdata Part #: | 1727-7732-2-ND |
Manufacturer Part#: |
BCP53TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | BCP53T/SOT223/SC-73 |
More Detail: | Bipolar (BJT) Transistor PNP 80V 1A 100MHz 1.8W Su... |
DataSheet: | BCP53TF Datasheet/PDF |
Quantity: | 1000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 63 @ 150mA, 2V |
Power - Max: | 1.8W |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SC-73 |
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BCP53TF is a NPN high voltage general purpose transistor as a part of Bipolar Junction Transistors (BJT) family in semiconductor industry. It is designed to work in single stage applications and has a high voltage and low current handling capacity. It is suitable for high frequency switching and circuits that require high level of reverse recovery. The transistor is mainly used in power amplifier drivers, power switching circuits, regulated power supplies, and in high voltage amplification stages.
The BCP53TF transistor can be used in a variety of applications, as it is capable of achieving up to 500 volts at a very low collector-base voltage. It is also designed to work with a reverse recovery time of less than 10 nanoseconds, making it ideal for high frequency switching circuits. It can be used to create power amplifiers with high power efficiency, as it can achieve a power gain of up to 25dB. To increase its functionality, the transistor can also be used in multiple-stage circuits, allowing to achieve even higher gains.
The working principle of the BCP53TF transistor is based on the basic operation of a NPN transistor, which consists of three terminals, the base, collector, and emitter. The collector is connected to the power supply, and the transistor works by injecting current into the base terminal. This current flow between the emitter and collector is controlled by the base terminal, which can be used to produce an amplification effect. With increased input current, the current flow increases between the emitter and collector and this increases the output voltage. The reverse-recovery time of the transistor is thus used to control the amount of current flowing through it.
The BCP53TF transistor is also designed to work with a low junction leakage current, which ensures high reliability at high voltages. The small junction capacitance of the device also ensures a low operating cost, as it is capable of operating with a wide range of supply voltages. Moreover, the transistor has a large power gain and can achieve a high output power when used in power amplifiers and switching circuits. With its high voltage and low current operation, the BCP53TF transistor can be used in many applications that require high level of performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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