BCP56TF Allicdata Electronics
Allicdata Part #:

1727-7619-2-ND

Manufacturer Part#:

BCP56TF

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN 80V 1A SOT223
More Detail: Bipolar (BJT) Transistor NPN 80V 1A 100MHz 1.8W Su...
DataSheet: BCP56TF datasheetBCP56TF Datasheet/PDF
Quantity: 1000
4000 +: $ 0.04234
8000 +: $ 0.03810
12000 +: $ 0.03387
28000 +: $ 0.03175
100000 +: $ 0.02822
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 1.8W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Description

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BCP56TF, also known as the PNP Low Power Transistor, is a type of bipolar junction transistor (BJT) in which two layers of semiconductor material with different up-doping form the base and the collector-emitter junction. It is commonly used in signal-switching and amplification applications where speed and low collecting current is required. It is also used in high-frequency small-signal amplifiers, low-noise amplifiers, low-power RF amplifiers, and in small signal inverters.

A PNP transistor consists of three sections: the base, the emitter and the collector. These three sections have respective electric charges (current flows). The base is positively charged, drawing electrons away from the emitter. The emitter is negatively charged, drawing electrons away from the base. The collector is made up of two layers of semiconductor material, which form a junction. One layer is lightly up-doped, which moves the electrons away from the base and up to the collector-emitter junction. The second layer is deeply up-doped, pushing the electrons from the other layer towards the collector-emitter junction.

A PNP transistor conducts when the base-emitter junction is forward-biased. This means that current flows from the emitter to the base. When the base-collector junction is reverse-biased, the current flow is blocked. The current is switched through the collector-emitter path when there is a base-collector current.

The BCP56TF has a low power dissipation character, allowing it to be mounted directly onto the PCB board. Through its low power dissipation, this transistor can operate up to 125°C. The BCP56TF can withstand a collector power of up to 0.6 W and has a maximum collector current of up to 100 mA. It does not require extensive heat sinking.

The BCP56TF offers a wide variety of applications in the field of low powered electronics. It is used in digital logic circuits, audio amplifiers, and in low-power analog amplifiers. This type of transistor is also used in DC to DC converters because it is able to sustain the zero crossing of the voltage waveform, which is crucial for the operation of these converters. It is also used in low-noise amplifiers, low-power RF amplifiers and in analogue multipliers.

BCP56TF is a small and low power transistor, which also exhibits low thermal resistance. Its small size allows it to be easily integrated in tiny electronic devices such as cell phones, GPS and other handheld devices. Due to its low power consumption, it is also suitable for use in battery-operated devices.

Overall, the BCP56TF is an excellent choice for applications in consumer electronic devices that require a transistor with a low power consumption and low thermal resistance. It is a reliable and efficient choice for amplifying low-level signals, boosting current or switching power and for small signal inverters.

The specific data is subject to PDF, and the above content is for reference

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