Allicdata Part #: | BCP56-16T1GOSTR-ND |
Manufacturer Part#: |
BCP56-16T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 80V 1A SOT223 |
More Detail: | Bipolar (BJT) Transistor NPN 80V 1A 130MHz 1.5W Su... |
DataSheet: | BCP56-16T1G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 2V |
Power - Max: | 1.5W |
Frequency - Transition: | 130MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | BCP56 |
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The BCP56-16T1G is a bipolar junction transistor commonly used in integrated circuits. This type of transistor is commonly referred to as a "single" because it has only one emitter, collector, and base. It is manufactured by a number of different companies, including NXP, ON Semiconductor, and Motorola.
BCP56-16T1G transistors are used in a wide range of applications, such as logic gates, amplifiers, LED drivers, and power switches. The transistor is also often found in consumer items such as personal audio systems, toys, and handheld appliances. Because of its low power consumption and high current gain, the BCP56-16T1G is an ideal choice for a variety of electronic projects.
This type of transistor functions by allowing electric current to flow through two different channel types. The first channel is the vertical channel, which is the collector and is used as the output. The second channel is the horizontal channel, which is the base and is used as the input. When a voltage is applied to the base, it starts a current flowing through the vertical channel, which is the collector current. The current then flows through the collector to the emitter. This current is amplified depending on the amount of current flowing into the base.
The gain of the BCP56-16T1G is generally determined by the number of available emitter electrons. The more electrons available, the higher the current gain will be. This gain is known as the "hFE", or "current gain". This parameter determines how much current amplification can be achieved with this type of transistor. Generally, the rated current gain of the BCP56-16T1G is 200. This means that any given input current will be amplified 200 times when it passes through the transistor.
The BCP56-16T1G is also quite efficient when it comes to heat dissipation. This means that the excess heat generated during electrical operation will not cause the circuit to malfunction. This is because the metal-oxide-semiconductor field-effect transistor (MOSFET) inside the BCP56-16T1G has a very low power-to-thermal resistance ratio. This allows for efficient operation of the transistor without the need for a large and expensive cooling system.
The BCP56-16T1G is also versatile, meaning that it can be used in a variety of different applications. It can be used as a switch, an amplifier, or even as a combination of both. Its flexibility allows it to be tailored to whatever design requirements are needed.
Overall, the BCP56-16T1G transistor is an excellent choice for a variety of applications. It is efficient, provides a high current gain, and is versatile enough to meet the needs of many different types of integrated circuits. Its combination of features makes it a reliable and durable choice for electronic projects.
The specific data is subject to PDF, and the above content is for reference
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