Allicdata Part #: | BCP51FSTR-ND |
Manufacturer Part#: |
BCP51 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 45V 1.5A SOT-223 |
More Detail: | Bipolar (BJT) Transistor PNP 45V 1.5A 1W Surface ... |
DataSheet: | BCP51 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 150mA, 2V |
Power - Max: | 1W |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223-4 |
Base Part Number: | BCP51 |
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BCP51 is a small signal bipolar junction transistor (BJT) designed for high-speed switching applications at collector currents of 10 milliamperes (mA) or less. It can also be used for general-purpose amplifiers. This transistor has a collector-emitter voltage (VCE) of 40 volts (V) and a DC current gain (hFE) of 110. This transistor is available in a TO-92 package.
The BCP51 transistor is a bipolar junction transistor with two base–emitter junctions connected back to back by a base connection. This structure acts as two diodes that are back to back and separated by a thin semiconductor layer. This semiconductor layer is referred to as the base, and it controls the flow of current between the other layers (collector and emitter).
In the BCP51 transistor, the collector–emitter voltage (VCE) is usually set to a voltage between 0 and 40 volts. The base current is used to control the current between the collector and the emitter. A small current entering the base can control a large current between the collector and the emitter. The current gain of the transistor (called hFE) is usually around 110.
The BCP51 transistor can be used in applications that require fast switching times and large current gain. The transistor can be used as a switch, amplifier, or as an oscillator. Some common applications include digital logic circuits, switching power supplies, audio amplifiers, and motor control circuits.
The BCP51 transistor works in the same way as other bipolar junction transistors. When a small current enters the base of the transistor, the current gain (hFE) of the transistor increases, allowing more current to flow between the collector and emitter. The collector-emitter voltage (VCE) determines the voltage between the collector and emitter. By controlling the base current, the transistor can be used to switch, amplify, or oscillate electrical signals.
In summary, the BCP51 transistor is a small signal bipolar junction transistor designed for high-speed switching applications with collector currents of 10 mA or less. It can also be used for general-purpose amplification and oscillator circuits. The transistor has a collector-emitter voltage (VCE) of 40 volts (V) and a DC current gain (hFE) of 110. It can be used as a switch, amplifier, or oscillator in applications such as digital logic circuits, switching power supplies, audio amplifiers, and motor control circuits.
The specific data is subject to PDF, and the above content is for reference
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