Allicdata Part #: | BCR108E6433HTMA1TR-ND |
Manufacturer Part#: |
BCR108E6433HTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS NPN 200MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | BCR108E6433HTMA1 Datasheet/PDF |
Quantity: | 1000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 5mA, 5V |
Base Part Number: | BCR108 |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 170MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
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BCR108E6433HTMA1 is a transistor belonging to the single, pre-biased category of bipolar junction transistors (BJTs). It is an NPN device with a maximum collector-emitter (CE) voltage of 300 Volts and a gain given by the parameter hfe, which is typically 248 at 1mA collector current.The device is designed to provide switching, amplification and protection solutions in a variety of applications, including but not limited to computer, instrumentation, industrial and communications systems.At its core, the BCR108E6433HTMA1 is a 3-layer junction between two layers of semiconductors. It is a three-terminal device comprised of a base, collector and emitter. The base is the control electrode - when current is applied to the base, electron flow from the emitter to the collector is enabled and the transistor is turned "on".The working principle of the BCR108E6433HTMA1 can be broadly broken down into three stages:1. Turn-on: The base current allows for electrons to flow from the emitter to the collector, turning the device “on”.2. Switching: Once the device is “on”, the current from the collector to the emitter is modulated and limited via the base current.3. Turn-off: Reducing the base current cuts off the flow of electrons and turns the device “off”.The device can thus be used as a switching element in circuits, due to its ability to break or make connections when controlled by a base current. It can be used as an amplifier due to its ability to modulate and control collector current, and as a protection device, due to its ability to turn off when overloaded.In hardware implementation, the BCR108E6433HTMA1 can be used in amplifiers, circuits and applications that require switching, protection and/or amplification such as motor control circuits, alarm systems, and audio circuits.Using the development and testing guidelines of the manufacturer, designers and engineers can confidently use BCR108E6433HTMA1 in these application fields. For example, the device should be tested in a setup with an operating voltage lower than the maximum rating, ensuring that no permanent damage is intentionally inflicted on the component.In conclusion, the BCR108E6433HTMA1 is a versatile transistor device that can be used in a variety of applications. Its proper use requires knowledge of its working principle, as well as its applicable range of operation. It is important to follow the guidelines and safety protocols provided by the manufacturer to ensure its proper and safe function.
The specific data is subject to PDF, and the above content is for reference
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