Allicdata Part #: | BCR185WE6327BTSA1TR-NDTR-ND |
Manufacturer Part#: |
BCR185WE6327BTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS PNP 250MW SOT323-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | BCR185WE6327BTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 5mA, 5V |
Base Part Number: | BCR185 |
Supplier Device Package: | PG-SOT323-3 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 200MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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BCR185WE6327BTSA1 application field and working principle
The BCR185WE6327BTSA1 is a single, pre-biased Transistor, commonly referred to as a BJT (Bipolar Junction Transistor). It is mainly used for power switching applications. This transistor is specially designed to provide a fast switching response and low on-resistance. It features high voltage and current ratings, making it an ideal solution for power system applications.
The BCR185WE6327BTSA1 is constructed with two NPN (N-channel) transistors and one PNP (P-channel) transistor, which are connected in series. The NPN transistors control the current flow between the emitter and collector, while the PNP transistor is used to control the voltage between the collector and emitter. When the base voltage is higher than the emitter voltage, current flows through the NPN transistors, while when the base voltage is lower than the emitter voltage, current is blocked.
The BCR185WE6327BTSA1 has a wide operating temperature range from -55°C to 125°C, making it suitable for applications that require extreme temperature resistance, such as automotive electronic systems. The collector-emitter breakdown voltage is 200V for high voltage systems, and the collector current can reach up to 3A. With a high switching speed of 1MHz, the BCR185WE6327BTSA1 is capable of operating efficiently in high frequency applications. Additionally, the device is capable of withstanding high surge currents, making it suitable for high power systems.
The BCR185WE6327BTSA1 provides excellent performance in power system applications as it has been designed with an optimized shape and size. The low on-resistance of this device reduces the heat dissipation during operation, making it more efficient. It also provides very high commutation speed and a stable electrical performance in switching applications.
In conclusion, the BCR185WE6327BTSA1 is an excellent choice for power system applications due to its high voltage and current ratings, high switching speed, and low on-resistance. The optimized shape and size of this device make it a durable solution even in extreme temperature applications, as well as in applications with high power. With its excellent performance, this device is suitable for automotive electronic systems, high frequency applications, as well as any other applications where power efficiency is important.
The specific data is subject to PDF, and the above content is for reference
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