BCR166B6327HTLA1 Allicdata Electronics
Allicdata Part #:

BCR166B6327HTLA1TR-NDTR-ND

Manufacturer Part#:

BCR166B6327HTLA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PREBIAS PNP 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: BCR166B6327HTLA1 datasheetBCR166B6327HTLA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Base Part Number: BCR166
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 160MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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BCR166B6327HTLA1 is a type of transistor categorized within the single, pre-biased bipolar junction transistors (BJT). It is a general-purpose device with low noise in amplification circuits, and is also popularly used for power applications.

BCR166B6327HTLA1 is manufactured by an ECB or Emitter Coupled Bias process which uses an integrated circuit technology. The device features a package designed for reliability and manufacturing flexibility, with a wide range of sizes and types available for use in a variety of applications and environments. The BCR166B6327HTLA1 features a low-forward voltage drop when operated under low current conditions, making it suitable for use in power applications.

The transistor is comprised of two interconnected NPN and PNP transistors. It is pre-biased, which means that the two types of transistors are wired together in a specific way so that they can be used as a single device and can be used in power applications without having to individually bias each transistor. This allows the transistor to operate both in the usual manner as an NPN transistor and in the reverse biased fashion which is necessary for most power applications.

The working principle of BCR166B6327HTLA1 is based on the principle of field effect transistor (FET) work. An FET consists of a gate, source, and drain, which are combined to form the single unit. When the gate voltage is increased, a current flows through the two sections of the transistor: The NPN and the PNP. This causes electrons to flow from the NPN to the PNP, creating the necessary voltage necessary to operate the application. In this way, the current flow between the two sections can be controlled and used to perform the desired function.

BCR166B6327HTLA1 is a very versatile transistor and can be used in a wide variety of applications. It is often used in amplifier circuits, as well as for power applications. In amplifier circuits, it can be used as an input device, as an output device, or as an intermediate stage in between. In power applications, it can be used for voltage regulation, for motor control, or for DC-to-DC converters. Additionally, it has applications in AC-to-DC converters and in sensing circuits.

BCR166B6327HTLA1 is also popularly used in commercial electronic systems such as cell phones, computers, and other electronic devices. It is a reliable and robust device, and its features make it ideal for a wide range of applications. The transistor is simple to use and operate, and its versatile nature makes it a popular choice for many different applications.

The specific data is subject to PDF, and the above content is for reference

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