BCR112E6327HTSA1

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The BCR112E6327HTSA1 is a General-Purpose NPN silicon pre-biased transistor, created in an AEC-Q101 qualified Surface-Mounted Device (SMD) plastic package, and manufactured by NXP. Being a pre-biased, single transitor, the BCR112E6327HTSA1 is perfect for low-power applications such as audio and general purpose amplifiers. This device is capable of withstanding high common-mode voltages and a maximum power dissipation of 500mW.

Application Field

The BCR112E6327HTSA1 is most suitable for use in low-power audio and general purpose amplifier solutions. It is also suitable for applications which require high common-mode voltage, such as relative humidity sensors and temperature compensation in Power Supplies. Additionally, it is also often used in automotive applications.

Working Principle

The BCR112E6327HTSA1 is an NPN transistor, with a Base-Emitter voltage of 5.8V and Collector current of 800mA. This pre-biased transistor has a predetermined Base-Emitter voltage, making it ideal for current switching and linear operations.

The transistor operates based on the physical principles of current amplification. When a small current is fed through the Base of the transistor, the current from the Collector is amplified. This phenomenon is known as the *common-emitter* configuration, whereby the Collector current is proportional to the Base current.

The amount of current amplification is determined by the current gain, known as the *Current Transfer Ratio*, which determines the amount of current that can be transferred from the Base to the Collector. The BCR112E6327HTSA1 offers excellent current amplification with a CTT of 0.85.

An important characteristic of the BCR112E6327HTSA1 is its high reverse voltage, allowing it to withstand up to 100V of reverse voltages. This allows the device to operate within a wide range of applications, making it suitable for high-voltage applications, such as in automotive conditions.

In addition to its high current amplification, the BCR112E6327HTSA1 also offers excellent thermal protection. The maximum power dissipation of the device is 500mW, which ensures the safety of the device even in the event of high current applications. The device is also designed to handle a wide range of temperatures, ranging from -40°C to +150°C.

Conclusion

The BCR112E6327HTSA1 is an ideal transistor for low-power audio and general purpose amplifier solutions. It offers excellent current amplification and can withstand a wide range of temperatures and voltages, making it suitable for automotive applications. The device is also designed with excellent thermal protection, ensuring maximum safety even in high current applications.

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