BCR135E6359HTMA1 Allicdata Electronics
Allicdata Part #:

BCR135E6359HTMA1-ND

Manufacturer Part#:

BCR135E6359HTMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PREBIAS PNP SOT23
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: BCR135E6359HTMA1 datasheetBCR135E6359HTMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 150MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Description

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TRANSISTORS - BIPOLAR (BJT) - SINGLE PRE-BIASED

BCR135E6359HTMA1 transistors are part of the bipolar junction transistor (BJT) family and are pre-biased for direct use in the application. They are a form of single transistor with the pre-biased feature.The BCR135E6359HTMA1 transistor has some distinct advantages over other types of transistors. One of them is their ability to switch faster than other types of transistors. This means that they can switch faster than bipolar transistors or any other type of transistor. The other main advantage is that they require less current than other types of transistors, allowing for more efficient designs.

BCR135E6359HTMA1 Application Field and Working Principle

BCR135E6359HTMA1 transistors are used in a variety of different applications, but their most common applications are in power switching, logic gates, and high frequency amplifiers. They are also used in linear amplifier applications and in motor control circuits.The working principle of the BCR135E6359HTMA1 transistors is based on the fact that they operate in N-type and P-type regions. When a voltage is applied to the base region, current flows through the transistor. This current then flows through the collector region, and finally through the emitter region. This current is then used to control or drive the devices connected to the transistor.

The main features of the BCR135E6359HTMA1 transistor include high voltage breakdown, high current gain, low noise operation, low power dissipation, and fast switching speed. It is also an extremely small device, making it ideal for applications requiring space-efficient designs. In addition, BCR135E6359HTMA1 transistors are available in a variety of package sizes.The BCR135E6359HTMA1 transistor can be used in a variety of different applications, including power management, motor control, and switching applications. It is also widely used in logic gates and high frequency amplifiers. Its fast switching speed and low power dissipation make it ideal for applications where energy efficiency is a priority.In conclusion, the BCR135E6359HTMA1 transistor is a versatile device which is used in a variety of different applications. Its fast switching speed, high voltage breakdown, and low power dissipation make it ideal for applications where energy efficiency is important. Its small size also makes it ideal for space-efficient designs. The BCR135E6359HTMA1 transistor is a great choice for power management, motor control, logic gates, and switching applications.

The specific data is subject to PDF, and the above content is for reference

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