BCV27 Allicdata Electronics
Allicdata Part #:

BCV27TR-ND

Manufacturer Part#:

BCV27

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 30V 1.2A SOT23
More Detail: Bipolar (BJT) Transistor NPN - Darlington 30V 1.2A...
DataSheet: BCV27 datasheetBCV27 Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1.2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Power - Max: 350mW
Frequency - Transition: 220MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: BCV27
Description

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BCV27 is a unique single bipole transistor. It is commonly used in applications requiring very low current and voltage gains. This makes it especially useful in various fields such as power amplifiers and transistor linear amplifiers. Additionally, it has applications in medical devices, consumer electronics, and energy management systems since its high frequency response, low operating power and small size can provide advantages in these types of applications.

A single bipole transistor is made up of three layers: base, collector, and emitter. The base is heavily doped and serves as the control element. The collector and emitter are lightly doped compared with the base and they act as the output and input elements. The collector and emitter are the electrodes through which current is passed. The base electronically controls the current, which is where its name originated. The emitter-base junction is forward biased and this increases the probability of electron-holes moving across the p-n junction, or in other words, enhances the current. Current flow is then increased as the voltage at the base pin increases. The collector and emitter form a reverse biased p-n junction while the current gain occurs at a saturated level where the collector and base voltage is combined.

The BCV27 single bipole transistor has a maximum Collector-Emitter Voltage of 20V and a base current of 10mA. It also has a power dissipation rating of 800mW and can work in temperature ranges from -55°C to 125°C. Due to its wide range of working temperatures and currents, it can be used in automotive and industrial applications such as power supplies, motor control, and switching circuits. Additionally, its power-handling capability and low distortion helps it to overcome various impedance levels and is especially useful in applications requiring low distortion and high power output.

The working principle of a BCV27 single bipole transistor is the same as the other basic transistors, but the way it operates is slightly different. This is because the BCV27 has two collectors, one forward biased and one reverse biased, and this gives it two times the operating current. When the voltage is applied to the base, it controls the flow of electrons as well as the influx of electrons from the emitter to the collector. The result is a higher current and voltage gain. Additionally, the BCV27 has lower saturation voltage which results in higher efficiency and better performance.

In conclusion, the BCV27 is an efficient single bipole transistor that can be used for various applications. Its low operating current and voltage gains make it ideal for use in power amplifiers and switching circuits. Additionally, its power handling capability and low distortion make it especially well suited for devices with high impedance. Finally, its wide range of working temperature and currents make it an excellent choice for automotive and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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