BCV27TC Allicdata Electronics
Allicdata Part #:

BCV27TC-ND

Manufacturer Part#:

BCV27TC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN DARL 30V 0.5A SOT23-3
More Detail: Bipolar (BJT) Transistor NPN - Darlington 30V 500m...
DataSheet: BCV27TC datasheetBCV27TC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Power - Max: 330mW
Frequency - Transition: 170MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: BCV27
Description

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BCV27T C Application Field and Working Principle 

The BCV27T C is a high-performance, general-purpose, silicon NPN bipolar junction transistor used for medium power amplifying and switching circuits. The BCV27T C offers an array of features ideal for applications where audio power drive, high gain and wide bandwidth are required. The device operates across a wide range of temperature and has an industry-standard TO-220 packaging, making the BCV27T C well-suited for many commercial and industrial applications.

The BCV27T C is a single bipolar transistors (BJT) device, referred to as a Bipolar Junction Transistor (BJT). This type of device is used for both power amplification as well as voltage regulation. Since this device is a unipolar personal, the current passes through a single p-n junction, and not through two. The overall structure of the BCV27T C includes three distinct terminals: the emitter, the base and the collector.

The operation of the BCV27T C works by applying a voltage from the base terminal to the emitter terminal. This creates an electric field across the p-n junction which repels the electrons from the n-type material to the p-type material. This, in turn, causes holes to move from the p-type material to the n-type material, forming a current flow. This current flow is the main operation of the BCV27T C.

The current flow of electrons in the BCV27T C can be regulated by having the collector terminal connected to either a positive or negative voltage source, which in turn determines the operational current flow. This technique can be used to create a wide range of amplifying parameters in order to suit any application.

The BCV27T C offers a high level of precision and accuracy. By including wide bandwidth capabilities, this device can achieve extremely high frequencies. Operating temperature range is also very wide (-40°C to 150°C). Additionally, the TO-220 packaging ensures the device is highly reliable in applications where it may be subject to industrial temperature or high vibration.

The BCV27T C is an optimal choice for medium power amplification and switching applications in many commercial and industrial settings. The combination of high gain and wide bandwidth, combined with its acceptable operating temperature ranges make this device an ideal choice for a variety of applications. Additionally, its industry-standard packaging will ensure it’s reliability in many settings.

The specific data is subject to PDF, and the above content is for reference

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