BCV29E6327HTSA1 Allicdata Electronics
Allicdata Part #:

BCV29E6327HTSA1TR-ND

Manufacturer Part#:

BCV29E6327HTSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS NPN DARL 30V 0.5A SOT-89
More Detail: Bipolar (BJT) Transistor NPN - Darlington 30V 500m...
DataSheet: BCV29E6327HTSA1 datasheetBCV29E6327HTSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PG-SOT89
Base Part Number: BCV29
Description

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The BCV29E6327HTSA1 is a single bipolar junction transistor (BJT). It is a semiconductor device with three terminals and two junctions. It has three layers – a base layer, collector layer, and emitter layer. The main purpose of the BCV29E6327HTSA1 is to amplify current and voltage. This device is typically used in power amplifiers and other applications requiring high switching speed and high power handling capability.

The BCV29E6327HTSA1 is a NPN-type transistor, which means that it uses two p-type semiconductor layers sandwiching an n-type semiconductor layer. When a small current is applied to the base layer, the n-type layer will become more conducting, allowing the larger collector current and collector voltage to pass. This phenomenon is called a transistor switch, and is the main principle of transistor operation.

The BCV29E6327HTSA1 can be used in a variety of applications. Commonly, it is used in power amplification circuits, such as high-powered audio amplifiers or motor control. It can also be used as a switch in logic circuits, or as a current regulator in linear circuits. The device may also be used in high-speed counting circuits, voltage stabilizing circuits, or even in RF circuits.

Apart from its practical uses, the BCV29E6327HTSA1 also has other impressive characteristics. Its breakdown voltage is rated at 150V, a current gain of 350, and a power dissipation of 1.0 W. It is a general-purpose transistor with low distorting characteristics. The maximum operating temperature is also rated at +150 degrees celsius. Finally, the device can also withstand high reverse voltage and high pulse currents.

In conclusion, the BCV29E6327HTSA1 is a widely-used transistor due to its wide range of applications, along with its impressively high power handling capability and switching speed. The device is also known for its low distorting characteristics and ability to withstand high reverse voltage and pulse currents. The three-layer construction of the transistor provides it with the ability to act as a switch or amplifier, enabling its use in many electronic circuits and devices.

The specific data is subject to PDF, and the above content is for reference

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