BCV29H6327XTSA1 Allicdata Electronics
Allicdata Part #:

BCV29H6327XTSA1-ND

Manufacturer Part#:

BCV29H6327XTSA1

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANSISTOR AF SOT89-4
More Detail: Bipolar (BJT) Transistor NPN - Darlington 30V 500m...
DataSheet: BCV29H6327XTSA1 datasheetBCV29H6327XTSA1 Datasheet/PDF
Quantity: 1000
5000 +: $ 0.09227
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3
Description

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Transistors - Bipolar (BJT) - Single

BCV29H6327XTSA1 is one of a range of Bipolar Junction Transistors (BJTs). Bipolar Transistors consist of a series of N and P material sections, formed into a three layer semiconductor, and are used in varying types of amplifier circuits and devices.

The BCV29H6327XTSA1 is a type of single transistor, which refers to its one junction, which is made up of two connections, one connected to the emitter and one connected to the collector. The single junction is also known as a \'bipolar\' junction as, when a current flows across it, there are \'bipolar,\' or both negative and positive voltage states.

The BCV29H6327XTSA1 is used in a range of applications depending on the device’s amplification characteristics, such as in amplifying voltages, currents, power, and signal waves. The component is suited for various applications such as audio equipment, signal processing, telecommunications, and power amplifiers.

The transistor typically works by controlling current and most transistor applications consist of an input signal voltage (Vin) applied to the base of the transistor. When the voltage reaches a certain threshold, the transistor will then amplify it, allowing a current to flow from the emitter to the collector. Depending on the type of transistor, the base-emitter voltage threshold can vary. This can then be dependent on the component\'s application, such as a switch or amplifier—in the latter, the potential is applied to the base-emitter junction in order to vary the resistance between the emitter and collector. As a result, the current flow from the collector to the emitter and vice versa can be varied.

The BCV29H6327XTSA1 is offered in a ‘3-pin SOT-23’ shape, which allows for a compact, low-cost device and gives it added operability and frequency response. The SOT-23 footprint eliminates the need for a heatsink, reducing power and temperature dissipation, resulting in a more efficient operating temperature. The form factor also allows for the transistor to be operated at higher frequencies while maintaining good thermal performance.

The BCV29H6327XTSA1 is a reliable and versatile component, suited to a variety of demanding applications. Its small size, low-cost, and thermal operability makes it a great choice for designers and system manufacturers. The component’s reliability and versatility make it suitable for both consumer and industrial electronics.

The specific data is subject to PDF, and the above content is for reference

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