Allicdata Part #: | BCV27E6395HTMA1-ND |
Manufacturer Part#: |
BCV27E6395HTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANSISTOR AF SOT23 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 30V 500m... |
DataSheet: | BCV27E6395HTMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 100µA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20000 @ 100mA, 5V |
Power - Max: | 360mW |
Frequency - Transition: | 170MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
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BCV27E6395HTMA1 is a type of single bipolar junction transistor (BJT) which belongs to the general family of transistors. A bipolar junction transistor is essentially a semiconductor device that essentially acts like a two-terminal switch or, more commonly, an amplifier. Bipolar junction transistors can be used in a range of applications, which are generally divided into two categories: field effect transistors (FETs) and discrete transistors (DTs). This type of single BJT is used mainly in FET applications, as it offers superior performance.
The most common application of the BCV27E6395HTMA1 is in digital switching, as the advanced bistable transistor configuration makes it ideal for use in FET designs. This type of single BJT can be used as a switch between two states, either high or low, allowing for a more precise digital switching method. Additionally, this type of single BJT can be used in analog applications, as its current gain and switching characteristics make it well-suited for this purpose. This single bipolar junction transistor is also well-suited for radio and television applications, as its current gain characteristics make it suitable for operation in the higher frequency range.
The working principle of the BCV27E6395HTMA1 is based on the biasing of the transistor and can be seen by looking at the band diagram of the device. It consists of two regions, namely the base region and the collector region, which occupy the two sides of the transistor. The base region is responsible for controlling the flow of current in the device and its ability to be switched off or on. The collector region provides the current path for the collector current and source current, meaning it provides the resistance for the flow of electrons. When a voltage is applied to the base, it produces a current in the collector region, causing electrons to flow through the collector region and causing the transistor to be switched on. When no voltage is applied, the transistor is switched off and no current is allowed to flow through the collector region.
The BCV27E6395HTMA1 is a versatile and reliable transistor that can be used in a range of applications, especially digital switching, analog applications, and radio and television applications. Its strong current gain and switching characteristics make it ideal for these purposes, and this type of single bipolar junction transistor is a great choice for any application requiring high performance and long-term reliability.
The specific data is subject to PDF, and the above content is for reference
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