Allicdata Part #: | BD234G-ND |
Manufacturer Part#: |
BD234G |
Price: | $ 0.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 45V 2A TO-225 |
More Detail: | Bipolar (BJT) Transistor PNP 45V 2A 3MHz 25W Throu... |
DataSheet: | BD234G Datasheet/PDF |
Quantity: | 1500 |
1 +: | $ 0.42840 |
10 +: | $ 0.36540 |
100 +: | $ 0.27266 |
500 +: | $ 0.21423 |
1000 +: | $ 0.16553 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 1A, 2V |
Power - Max: | 25W |
Frequency - Transition: | 3MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-225AA |
Base Part Number: | BD234 |
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Transistors are an important foundation of modern electronics which operate in many forms for a variety of tasks. One such form is the Bipolar Junction Transistor (BJT), also known as a bipolar transistor. In a BJT, a current is applied to a semiconductor material, which is then used to generate a series of other currents, depending on the gain value at which the BJT operates.
The BD234G is a type of BJT which, due to its low noise, low power dissipation and high gain values, is popular in a variety of applications. These generally include high frequency amplifiers in radio, oscillator and tuner circuits, as well as in tone control and audio mixer circuits. In addition, it is suitable for use as a switch in low-speed types of equipment such as thermostats, flow meters, air conditioning equipment and motor protective devices.
The working principle of the BD234G is essentially the same as other BJT transistors, but with a few tweaks to reduce noise, power dissipation and improve its gain. First, an input signal is applied to an emitter-collector junction, and as with other transistors, the signal is amplified before being forwarded to the base-collector junction. However, instead of a connection between the base-emitter and collector-emitter junctions, the two junctions are connected together with a diode, reducing the total power dissipation and improving the device\'s high-frequency performance.
In addition, the BD234G is designed with a new structure, which ensures a higher gain value, lower noise and improved linearity. This new structure, which can be roughly divided into two parts, consists of a current-limiting resistor and a current-mirror circuit. The current-limiting resistor is used to restrict the current flowing in the base-emitter diode, thereby increasing the potential of the collector to the base and increasing gain. The current-mirror circuit is used to copy the signal received from the emitter and to amplify it, thereby further increasing the gain.
Overall, the BD234G is a popular type of BJT transistor which, due to its low noise, low power dissipation and high gain values, is suitable for a variety of applications. Its new structure also ensures improved performance, making it well-suited to use in various types of equipment, as well as in audio and radio circuits.
The specific data is subject to PDF, and the above content is for reference
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