Allicdata Part #: | BD239E-S-ND |
Manufacturer Part#: |
BD239E-S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Bourns Inc. |
Short Description: | TRANS NPN 140V 2A TO-220 |
More Detail: | Bipolar (BJT) Transistor NPN 140V 2A 2W Through H... |
DataSheet: | BD239E-S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 140V |
Vce Saturation (Max) @ Ib, Ic: | 700mV @ 200mA, 1A |
Current - Collector Cutoff (Max): | 300µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 1A, 4V |
Power - Max: | 2W |
Frequency - Transition: | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
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The BD239E-S is a high performance, PNP, silicon epitaxial planar transistor designed for audio and general purpose applications. It is capable of providing high current gains at moderate collector currents. This makes it suitable for a broad variety of operational amplifier, drivers and switching application needs.
Application Field
The BD239E-S is ideal for linear and switching applications, such as high fidelity audio amplifiers and power drivers. Its high current gain and forward transfer characteristics make it ideal for use in high input impedance configurations, such as impedance-interleaved bridge circuits. Its low generation noise and frequency response make it especially suitable for signal conditioning, signal amplification, and audio applications including high fidelity audio amplifiers and switching power supplies.
The BD239E-S offers excellent thermal stability, allowing it to function reliably in extreme conditions. This makes it a great choice for applications in harsh environments, such as automotive, industrial, and medical applications. Its low leakage and high gain characteristics also make it suitable for use in high power and high-precision circuits.
Working Principle
A bipolar transistor is essentially two diodes joined together at their two ends by a thin base layer. It operates on the principle of a diode junction. When a voltage difference is applied across the base and the emitter of the transistor, it causes current to flow from the collector to the emitter. This is known as forward bias. As the current increases, it is able to activate gate circuits, amplify signals, or switch currents.
The BD239E-S has a large current gain over a wide range of collector currents. This allows it to operate as both a linear and a switching device. As a linear device, it can be used as an amplifier to increase the power of a signal. When used as a switching device, the device can be used to control a current or to switch between different operating modes. It can also be used to limit the maximum output current of a particular circuit.
The BD239E-S also features very low switching times, which makes it ideal for operation in high-speed data transfer applications, such as Ethernet, USB, and wireless communication networks.
In summary, the BD239E-S is a high performance, PNP, silicon epitaxial planar transistor designed for audio and general purpose applications. It is suitable for linear and switching applications, such as high fidelity audio amplifiers and power drivers. Because of its high current gains and low switching times, it is ideal for high-impedance, high-power and high-precision circuits. It is also suitable for applications in harsh environments, such as automotive, industrial, and medical applications.
The specific data is subject to PDF, and the above content is for reference
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