BD236STU

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The BD236STU is a kind of single bipolar junction transistor (BJT). It is used in a variety of applications due to its good switching characteristics, high gain and low saturation voltage. This device is designed for use in high frequency applications including vehicle alarms, emergency lighting, security systems and across-the-line motor starting.

The structure of the BD236STU consists of three regions, emitter, base, and collector separated by two p-n junctions. The emitter region is heavily doped with n-type impurities and the collector region is heavily doped with p-type impurities. The base region is lightly doped with p-type impurities.

When the emitter-base junction is forward biased, the depletion region designated by the region of negative charge becomes increasingly thin. This allows electrons to easily move from the emitter region to the base region. The electrons then flow from the base region to the collector region causing a current to flow from the collector to the emitter. This is referred to as forward biasing of the transistor.

When the collector-base junction is reverse biased, the depletion region designated by the region of negative charge becomes increasingly thin. This prevents electrons from moving from the collector region to the base region. The current flows from the emitter to the collector and this is referred to as reverse biasing of the transistor. The magnitude of the current flowing from the emitter to the collector is dependent on the voltage applied to the collector.

The BD236STU has a high breakdown voltage of 60V and it is capable of operating at frequencies up to 15MHz. This makes it suitable for switching applications such as vehicle alarms, security systems, and across-the-line motor starters. The device incorporates a low VCEsat of 1.5V and high current gain, making it suitable for applications that require low saturation voltage. The device also features a low noise level and is protected against reverse-current and over-voltage.

In conclusion, the BD236STU is a single bipolar junction transistor that is designed for high frequency switching applications. It has a high breakdown voltage and low saturation voltage, making it suitable for a variety of applications. The device is protected against over-current and over-voltage conditions, making it a reliable and robust choice for a variety of applications.

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