BD243A Allicdata Electronics
Allicdata Part #:

BD243A-ND

Manufacturer Part#:

BD243A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 60V 6A TO-220
More Detail: Bipolar (BJT) Transistor NPN 60V 6A 65W Through H...
DataSheet: BD243A datasheetBD243A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Power - Max: 65W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Base Part Number: BD243
Description

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The BD243A is a single bipolar junction transistor that operates as both a NPN and PNP device, a unique characteristic found in few transistor variations. This makes it a reliable choice for many applications and has become a popular within the transistor device market.

What makes the BD243A different from other transistors is its capability to handle higher voltages and amperage than other similar NPN/PNP transistors. This allows it to be used in various applications such as audio amplifiers, automotive electronics, and power switching.

In terms of its physical properties, the BD243A is composed of two layers of semiconductor materials: an N-type layer and a P-type layer. When a DC voltage is applied to the base terminal, it creates a junction between the two semiconductor layers, which in turn modulates the current flowing through the transistor. This is done by the transistor’s internal resistance reacting to the electric field created due to the difference in the potentials of the N-type region and the P-type region.

The current at the collector terminal is known as the collector-emitter current or Ice, while the base-emitter current or Ibe is responsible to act as the control of the current. This is because it is proportional to the current of the collector-emitter and is used to control the current of the collectors.

Moreover, the BD243A is featured with an array of characteristics such as high current gain, high breakdown voltage, high peak collector and emitter voltage, and low power dissipation.

Specifically, it can handle up to 20 amps of current, with voltage ratings of up to 60 volts. It has a high power-frequency gain of about 50, and a DC gain of close to 50.

Given its features and capability, the BD243A transistor is ideally suited for applications that need high current handling, reliability, and precision. It has found itself being used for audio amplifier designs, power switching applications, low-frequency linear amplifiers, etc.

For instance, it is often used in electronic circuits with radio transmitters, since it can provide high power switching of up to 20 amps in applications that need low-level audio amplification.

In conclusion, the BD243A transistor is a high-power, high-voltage, and highly reliable single NPN/PNP bipolar junction transistor. Its high current handling and voltage ratings make it suitable for various applications such as automotive electronics, audio amplifiers, and power switching. It has a high power-frequency gain of around 50, and a DC gain of close to 50, making it a reliable choice for many projects.

The specific data is subject to PDF, and the above content is for reference

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