Allicdata Part #: | BD241A-S-ND |
Manufacturer Part#: |
BD241A-S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Bourns Inc. |
Short Description: | TRANS NPN 60V 3A |
More Detail: | Bipolar (BJT) Transistor NPN 60V 3A 2W Through Ho... |
DataSheet: | BD241A-S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 1.2V @ 600mA, 3A |
Current - Collector Cutoff (Max): | 300µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 1A, 4V |
Power - Max: | 2W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
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Single bipolar transistors (BJTs) come in many different types, each offering unique advantages and disadvantages. One of the most versatile is the BD241A-S, which can be used in a variety of applications. In this article, we\'ll examine the applications of this device and discuss its working principle.
What is the BD241A-S?
The BD241A-S is a PNP bipolar junction transistor (BJT) produced by ON Semiconductor. It has a maximum collector dissipation (PC) of 0.5W, a gain-bandwidth product (fT) of 0.7GHz, and a collector-emitter saturation voltage (VCE (sat)) of 0.8V. The device can operate over a wide temperature range of -55°C to +150°C.
What are the applications of the BD241A-S?
The BD241A-S can be used in a variety of applications, including analog circuits and power management.
- Analog Circuits: The device can be used to form high-speed analog circuits. It has an fT of 0.7GHz, which allows it to be used in high-frequency circuit designs. Additionally, its VCE (sat) of 0.8V and low noise characteristics make it well-suited for audio application circuits and voltage followers.
- Power Management: The BD241A-S can also be used in power management applications. Its PC of 0.5W, high-temperature operating range (-55°C to +150°C), and low collector-emitter saturation voltage make it ideal for switching and output stages in DC-to-DC converter and AC-DC power supplies.
What is the Working Principle of the BD241A-S?
The BD241A-S, like all BJTs, is a current-controlled device that consists of three layers, known as an emitter, base, and collector. In a PNP transistor, the current flow from the emitter to the collector is controlled by a current flowing into the base.
When a voltage is applied to the base of the BD241A-S, it creates a small current. This current then passes through the emitter-base junction, creating a voltage drop across the junction. This voltage drop creates a "base-emitter forward voltage", which limits the amount of current that can flow through the emitter-collector junction. The amount of current that can flow through the emitter-collector junction is proportional to the base current.
In conclusion, the BD241A-S is a versatile PNP BJT that can be used in a variety of applications. Its high-frequency characteristics and low VCE (sat) make it well-suited for analog circuits, while its power handling and temperature resistance make it ideal for power management applications.
The specific data is subject to PDF, and the above content is for reference
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