Allicdata Part #: | BD240-S-ND |
Manufacturer Part#: |
BD240-S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Bourns Inc. |
Short Description: | TRANS PNP 45V 2A |
More Detail: | Bipolar (BJT) Transistor PNP 45V 2A 2W Through Ho... |
DataSheet: | BD240-S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 700mV @ 200mA, 1A |
Current - Collector Cutoff (Max): | 300µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 1A, 4V |
Power - Max: | 2W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
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The BD240-S is a high-power field-effect power transistor with a wide range of applications. This type of transistor is also known as a bipolar junction transistor (BJT) because it combines the action of two different types of transistors: the basic n-type MOSFET and the bipolar n-type junction transistor. The transistor was invented in the 1960s and has been widely used in many industrial and consumer applications, such as amplifiers, power supplies, and high-powered switching applications.
The device is comprised of a P-type semiconductor substrate and an N-type semiconductor material on the opposite side. When a voltage source is applied to the transistor, electrons flow from the P-type semiconductor layer into the N-type material. As the electron flow is increased, a larger current is produced, increasing the overall power of the device. The negative charge of the electrons and the positive charge of the voltage source are transferred to the N-type material and the resulting inversion mode is known as bipolar junction (BJT) action. This type of transistor is therefore used in devices that require high current and low voltage.
The BD240-S is typically used in power supplies and high output switching applications. It is capable of delivering up to 50 amps of continuous current, with a peak current of over 100 amps. The device has a very low on-resistance (R_DS(ON)), which results in low power dissipation and high device efficiency. The wide gate voltage range (V_GS from 0.5 to 8V) allows for precise voltage control and the temperature range can be balanced from -55°C to 125°C. In addition, the device has a low capacitance, making it suitable for use in high-frequency switching applications.
The working principle behind the BD240-S is similar to that of other power transistors. When a voltage is applied to the gate, the current begins to flow through the N-type channel and out of the source. This action increases the voltage at the drain and allows the transistor to amplify the output. As the current increases, so does the voltage at the drain, resulting in increased power. The device also acts as a switch, preventing current from flowing when the gate voltage is below a certain threshold. This threshold can be adjusted by changing the gate voltage or by using a potentiometer.
The BD240-S is an important power transistor and is used in a wide range of applications. It offers excellent performance and reliability, along with the ability to handle high current and low voltage. The wide range of applications and the wide temperature range make it a popular choice for power supplies, amplifiers, and switching applications. As with any transistor, proper design and use are necessary to ensure the device’s longevity and performance.
The specific data is subject to PDF, and the above content is for reference
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