BD241-S Allicdata Electronics
Allicdata Part #:

BD241-S-ND

Manufacturer Part#:

BD241-S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Bourns Inc.
Short Description: TRANS NPN 45V 3A
More Detail: Bipolar (BJT) Transistor NPN 45V 3A 2W Through Ho...
DataSheet: BD241-S datasheetBD241-S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 600mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Description

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The BD241-S is a bipolar junction transistor (BJT) with three terminals—the emitter, the base, and the collector. This type of transistor is widely used due to its high voltage and current gain properties and robustness. The most common applications involving the BD241-S are amplifying signals, switch ON/OFF circuits, and current regulating circuits.

The BD241-S is a NPN-type BJT with a high current capacity of up to 15 amperes. The device features a low saturation voltage of 0.15 volts and a high breakdown voltage of 100 volts. It also has excellent temperature stability and high gain performance over a wide range of operating conditions.

In an NPN BJT, current flow through the collector-emitter path is controlled by the base current. The transistor acts as an electrically controlled switch, allowing current to flow from the collector to the emitter when the base-emitter junction is forward-biased. When the base-emitter junction is reverse-biased, current does not flow and the transistor acts as an open switch.

The BD241-S is primarily used in inverter and driver circuits. In reverse bias operation, the BD241-S can be used as a current sensing switch. The device also serves as an excellent power switch due to its low on-state voltage and low switching loss. In addition, the BD241-S can be employed in electrical circuits that require high-speed switching and high current density.

The BD241-S features the common emitter configuration, with the emitter connected to the ground terminal, the collector connected to the power supply, and the base connected to the control voltage. This arrangement allows for a large current gain, a low output capacitance, and a high current density. The device\'s symmetrical structure allows for a high frequency response, and its collector-to-base breakdown voltage ensures high voltage stability.

The BD241-S is a versatile device with a variety of applications. In addition to the previously stated applications, the device can also be used in polarity protection circuits, series regulating circuits, current sensing circuits, and line regulators. It can also be used in high voltage and low voltage switching applications, such as those in the automotive industry.

The BD241-S has proven to be a viable option, especially in applications where space considerations are of utmost importance. The device\'s low parasitic capacitance and wide operating temperature range make it an ideal choice for many applications. In addition, its high gain, low on-state voltage, and solid-state construction make the BD241-S an optimal choice for applications requiring reliability and efficient performance.

The specific data is subject to PDF, and the above content is for reference

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