Allicdata Part #: | BD246C-S-ND |
Manufacturer Part#: |
BD246C-S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Bourns Inc. |
Short Description: | TRANS PNP 100V 10A |
More Detail: | Bipolar (BJT) Transistor PNP 100V 10A 3W Through ... |
DataSheet: | BD246C-S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 4V @ 2.5A, 10A |
Current - Collector Cutoff (Max): | 700µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 4 @ 10A, 4V |
Power - Max: | 3W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-218-3 |
Supplier Device Package: | SOT-93 |
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The BD246C-S is a power PNP silicon transistor and part of a larger family of quickly amplifying, complementary transistors made for industrial use. This particular semiconductor device consists of three layers of semiconductor material and is used for switching and amplifying electrical signals. It is in a category called transistors, a type of active circuit element that can amplify signals. Transistors generally have at least three terminals on which voltages are applied to control the internal current of the device. The three layers of semiconductor material in the BD246C-S consist of an emitter, base, and collector arrangement, with the majority charge controlling the amount of current that flows between the two. As such, the BD246C-S can be used to amplify or switch electrical signals.
The BD246C-S is a single bipolar type transistor, and its basic working principle is based on the bipolar transistor action theory. This theory is built on the idea that the DC current is modified or amplified by the application of an external electric field of opposite polarity. It works by using two PNP junction semiconductor regions, with their outer half of the material being reverse biased, and the central region being forward biased. In this way, the current flows through a base region to the collector, and is amplified when the electric field of the external source is applied. The BD246C-S works in a similar manner, with the DC current, originating from the emitter, passing through the base and being amplified as it enters the collector, before returning to its source.
The BD246C-S transistor is widely used in a range of industrial applications. It is suitable for use as an electronic switch, in power amplifiers, or in other applications where high current conduction is needed. The BD246C-S can be used in a variety of different applications due to its higher voltage capability, wide safe operating area, and low saturation voltage. It can be used in power supplies, motor controls, or DC-DC converters, as well as in saturation and current-limiting circuits. Additionally, the BD246C-S can be used as a power amplifier, as it is capable of handling high levels of input power without saturation. This makes the BD246C-S ideal for use in certain power-management applications such as battery charging, solar energy, and wind energy.
The BD246C-S is an extremely versatile semiconductor device, with its high voltage capability, low saturation voltage and wide safe operating area making it well-suited for a variety of industrial applications. It is an efficient solution for a range of power-related applications, as well as for use as an electronic switch or power amplifier. With its ability to handle high levels of input power, the BD246C-S is an optimal choice for industrial uses, where reliable performance and power management are critical.
The specific data is subject to PDF, and the above content is for reference
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