Allicdata Part #: | BD244-S-ND |
Manufacturer Part#: |
BD244-S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Bourns Inc. |
Short Description: | TRANS PNP 45V 6A |
More Detail: | Bipolar (BJT) Transistor PNP 45V 6A 2W Through Ho... |
DataSheet: | BD244-S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 6A |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 1A, 6A |
Current - Collector Cutoff (Max): | 700µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 3A, 4V |
Power - Max: | 2W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
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BD244-S is a NPN silicon epitaxial planar transistor of the BF244-S classification, group III, also known as the 80V 30A 30W PNP transistor. It belongs to a series of transistors known as the 2N600 group, which are commonly used in high power applications.
This powerful transistor is optimal when used in various audio and high voltage power supply applications. It is a suitable device for switch mode power supplies, output stages of amplifiers, power transistors in power switching circuits and for high voltage switch applications. It is also frequently used as a current limiter in automotive electronic systems.
The BD244-S is able to maintain excellent isolation and steady current control from small signal to large quantities. It is a great match for applications involving power transistors, requiring low collector-obsorbates and delivering high current gains.
This high-voltage, high-current device is able to operate over a wide temperature range with minimal power dissipation. The BD244-S is able to deliver high-speed switching, with minimum transition times and superior dynamic characteristics. It has a high frequency startup and respectable thermal capability.
The BD244-S has a working principle that is based on the flow of electric current from the B (base) to the C (collector), through the E (emitter). This is because of the non-conductive layer of silicon between the Base and the Collector, allowing the electric current to pass through the PN junction. The B and E components of the transistor are separated by a thin layer of insulating material, creating a junction between the two components. As the electric current passes through the PN junction between the emitter and collector, the electric current gains energy, making it easier for the current to pass through the Base. The amount of current that will be allowed to pass through the Base is determined by the base current, the Base-to-Emitter voltage. As the power of the base current is increased, the emitter to collector current will also increase, as the electric current flows from the Base to the Collector.
The BD244-S transistor is ideal for a wide range of applications, including switching applications in the audio industry, power switching needs of high current power supplies, and safety critical circuits like the current limiter in automotive electronic systems. This device will provide excellent performance in all its applications due to its superior level of power handling, robust construction, and fast transition times. This device is capable of providing superior isolation of low collector-to-emitter electrons, fast response times, high frequencies, and efficient thermal control.
The specific data is subject to PDF, and the above content is for reference
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