BD245C-S Allicdata Electronics
Allicdata Part #:

BD245C-S-ND

Manufacturer Part#:

BD245C-S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Bourns Inc.
Short Description: TRANS NPN DARL 100V 10A
More Detail: Bipolar (BJT) Transistor NPN - Darlington 100V 10A...
DataSheet: BD245C-S datasheetBD245C-S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 4V @ 2.5A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 10A, 4V
Power - Max: 3W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-218-3
Supplier Device Package: SOT-93
Description

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The BD245C-S is a popular single-package transistor device. The device can be categorized in the Transistors - Bipolar (BJT) - Single, class of transistor devices. The device is both rugged, and reliable, with a minimum gain of 250, making it a perfect choice for many applications. The device also has a maximum power dissipation rating of 625 mW, helping to make it especially useful in applications where power and reliability are of the utmost importance.

The application fields of the BD245C-S are extensive, as the device has earned a strong reputation for being reliable with a relatively low power dissipation rating. Its use can be seen in consumer electronics, such as audio amplifiers, DVD players, and video games. It is also a popular choice for use in industrial equipment, such as motor control circuits, security systems, and control circuit boards.

The principle of operation of the BD245C-S is fairly simple. The device is a Bipolar Junction Transistor, or BJT. A BJT is composed of three key elements – a base, a collector, and an emitter. An electrical current applied to the base region creates a field, which in turn allows electrons to flow from the emitter region to the collector region. This flow of electrons is what makes the device operational. As the connected components require more power, the base current is increased, creating a larger field, which in turn allows for more electrons to travel from the emitter to the collector. As the base current is decreased, the electrons flow from the collector to the emitter and the device is turned off.

The BD245C-S is a reliable device that is widely accepted for use in a variety of applications. Not only does the device have a minimum gain of 250, but it also has a maximum power dissipation rating of 625 mW. This combination of features makes it perfect for use in applications where power and reliability are of the utmost importance. In addition, the relatively straightforward work principle of the BJT gives users the opportunity to use the device with little additional training or research. As such, it is no surprise that the BD245C-S is a popular choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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