Allicdata Part #: | BD743A-S-ND |
Manufacturer Part#: |
BD743A-S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Bourns Inc. |
Short Description: | TRANS NPN 60V 15A |
More Detail: | Bipolar (BJT) Transistor NPN 60V 15A 2W Through H... |
DataSheet: | BD743A-S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 15A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 5A, 15A |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 5A, 4V |
Power - Max: | 2W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
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The BD743A-S is a silicon NPN epitaxial planar type transistor, a high-voltage, high-speed switching transistor used in many applications. Its features include high breakdown voltage and low collector-emitter saturation voltage, making it a great choice for driving motors, relays, and high-frequency power switches. This transistor is well suited for circuit applications involving voltage amplification, high-speed switching, and control circuits.
The BD743A-S has a single base for its circuitry, which enables it to operate at higher speeds than other types of transistors. Its construction consists of three semiconductor layers, each of which is connected to one of the three terminal electrodes. The pattern of the semiconductor layers is designed to optimize performance in switching applications. When the base electrode is powered, it creates a current flow through the first semiconductor layer, which creates a base-collector voltage drop. This voltage drop enables current to flow through the second layer and then to the third, which is connected to the collector terminal.
Powering the base electrode also activates a current between the emitter and collector terminals, allowing the collector current to increase linearly with an increase in base current. Generally, this flow of current is maintained until the base-emitter junction reaches it’s saturation voltage. At this point, the current flow through the transistor ceases. This is known as the cutoff region and is used to turn off the device.
The BD743A-S was specifically designed to provide medium-power solutions in a variety of applications, including high-voltage switching, AC motor control, and DC-DC converters. Its high-speed switching capabilities also make it a great choice for application in video and audio transmitters, high-frequency power amplifiers, wideband amplifiers, and fast-toggle memories. This versatile device has a fast response time, and its integral protection, such as reverse-bias immunity and current limiting, makes it an ideal solution for high-power systems and devices that are subject to voltage and current spikes.
The BD743A-S is also a cost-effective, low-power device compared to other transistors, and its small size makes it an excellent choice for circuits with limited space. As with other transistors, proper shielding and grounding must be in place when using the BD743A-S to ensure proper operation. This device is available in both through-hole and surface-mount packages.
The BD743A-S is a versatile, high-speed switching transistor that can be used in a variety of applications. Its high-voltage and low-saturation capabilities make it ideal for powering motors, relays, and high-frequency power switches. It’s fast response and integral protection features, along with its small size and cost-effective design, make it an excellent choice for medium-power applications. Additionally, the proper shielding and grounding must be in place when using this device to ensure proper operation.
The specific data is subject to PDF, and the above content is for reference
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