BD746C-S Allicdata Electronics
Allicdata Part #:

BD746C-S-ND

Manufacturer Part#:

BD746C-S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Bourns Inc.
Short Description: TRANS PNP 100V 20A
More Detail: Bipolar (BJT) Transistor PNP 100V 20A 3.5W Throug...
DataSheet: BD746C-S datasheetBD746C-S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 20A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 3V @ 5A, 20A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
Power - Max: 3.5W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-218-3
Supplier Device Package: SOT-93
Description

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The BD746C-S is a high-power low-voltage Bipolar Junction Transistor (BJT). It is commonly used in high-frequency switching applications, such as motor control and power switchgear, where its high voltage and power capability make it ideal. This article will discuss the application field and working principle of the BD746C-S.

The BD746C-S is a NPN type of BJT, meaning that it has two layers of semiconductor material (base, emitter and collector), with the base and emitter made of one material and the collector made of another. It is designed to operate at high voltages, up to 500 V, and can handle high current loads of up to 10 A. This makes it suitable for applications like motor control, power switchgear, and other high-frequency switching applications.

The working principle of the BD746C-S is based on the physical properties of the BJT. In a BJT, electrons from the emitter are injected into the base region due to the applied voltage. This way, a large number of electrons are made available for conduction in the base. These electrons then pass through the base region and into the collector region, where they are collected by the collector. As a result, the BJT acts as an amplification device, with the amount of current gain depending on the amount of voltage applied.

The BD746C-S can be used in a wide range of applications, including audio amplifiers, power switchgear, radio frequency (RF) amplifiers, and motor control. It is also used in applications such as diode laser drivers, pre-amplifiers and power transistors. It is also suitable for use in power supplies and as a back-off switch in DC circuits.

Due to its high voltage and current handling capabilities, the BD746C-S is an excellent choice for use in high-frequency switching applications. It is also highly reliable and offers good performance in high temperature and high voltage conditions. Additionally, its high isolation level ensures safe operations in complex circuits.

In summary, the BD746C-S is an NPN type BJT that is highly suitable for high-frequency switching applications, motor control, power switchgear, and other similar applications. It has excellent high-voltage and high-current capabilities, and its high isolation level ensures safety in complex circuits. Its working principle is based on the physical properties of the BJT, whereby electrons from the emitter are injected into the base region, which are then collected in the collector region. All these features make the BD746C-S an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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