BD746A-S

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	20A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	3V @ 5A, 20A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 5A, 4V
Power - Max:	3.5W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-218-3
Supplier Device Package:	SOT-93

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The BD746A-S is a general purpose NPN Bipolar junction transistor (BJT) manufactured by General Electric. It is specifically designed for consumer applications, especially in audio and power circuits. With its low noise and high gain characteristics, it can be used for various applications including AF amplification, high frequency oscillators, biasing applications and general switching.

Description of the BD746A-S

The BD746A-S is a small signal NPN transistor that is available in a hermetically sealed vacuum package. It has a collector-emitter breakdown voltage of 300V, an avalanche energy of 50mJ, and a collector-base breakdown voltage of 600V. The BD746A-S has a high gain of 810, a low saturation voltage of 0.2V, and an emitter-base voltage of 4.5V. It has a current gain of 200 to 400, depending on the current flowing in the collector circuit. It is well suited for use in audio applications, as it has very low distortion and excellent noise rejection. It is also used in RF and power amplifier applications, as well as in switching circuits.

Applications of the BD746A-S Transistor

The BD746A-S can be used in many applications such as AF amplifiers, high frequency oscillators, biasing applications, and general switching. It is especially popular in audio circuits as it has good noise rejection and low distortion.In amplifier applications, the BD746A-S can be used as an input stage, pre-amplifier or output stage. It is also used in switching circuits due to its high current gain, low saturation voltage, and its highly stable operation.In biasing applications, the BD746A-S can be used to provide regulated voltage to circuits that require high voltage. It is also used in radio frequency (RF) amplifiers as it has good linearity and stability.

Working Principle of the BD746A-S

The BD746A-S is an NPN transistor, which means that it has two p-type layers of semiconductor material between two n-type layers. When a small current is applied to the base of the transistor, it causes the larger collector-emitter current to flow. This collector-emitter current is then amplified, resulting in a larger output current. One of the main advantages of the BD746A-S is that it has a high current gain, which results in more efficient operation. It is also capable of receiving a wide range of input signals, which makes it suitable for use in audio and power circuits.

Conclusion

The BD746A-S is a general purpose NPN Bipolar junction transistor (BJT) manufactured by General Electric. It is designed for consumer applications, especially in audio and power circuits. The BD746A-S has a high gain of 810, a low saturation voltage of 0.2V, and an emitter-base voltage of 4.5V. It is widely used in amplifier applications, biasing applications, and general switching. It has a good noise rejection and low distortion, which makes it ideal for audio applications. The main advantages of the BD746A-S are its wide range of input signals, high current gain and stable operation.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description