BD744B-S

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	15A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	3V @ 5A, 15A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 5A, 4V
Power - Max:	2W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction
The BD744B-S is a modern NPN high-voltage bipolar junction transistor (BJT). It is designed to operate in a wide range of temperatures from -65oC to +150oC and boasts an extremely low collector-emitter saturation voltage of approximately 0.4 volts. With its immense power dissipation of up to 6A continuous collector current, it can provide superior performance in a wide range of power supply and control commonly used in automotive, industrial and medical applications.Application Fields
The wide range of power supply and control applications that the BD744B-S is suitable for is the main attraction of this transistor. In particular, the BD744B-S uses a high voltage collector-emitter saturation voltage that can easily drive an inductive load. It is ideal for applications such as HVAC, DC/DC converters, power supplies and SCRs.The BD744B-S also finds application in driving relays and other inductive loads such as electric motors and fans. When used in such applications, it can provide excellent switching performance with minimal power loss. In addition, this bipolar junction transistor can be used for broadband frequency converter applications, where it is necessary to convert AC power to DC power at high speed.Working Principle
The BD744B-S is a NPN bipolar junction transistor (BJT). It is formed by three layers of semiconductor material: the emitter, base and collector. Two electric junctions (PN junction) exist between these layers. N-type material forms the emitter and collector while P-type material forms the base.When a positive current flows into the base terminal, it creates an electric field which attracts electrons out of the emitter and into the base. The large number of electrons in the base reduces the width of the depletion region (area between the base and collector, which is depleted of charge carriers). This allows electrons to move freely between the base and collector, allowing current to flow.The amount of current flowing between the base and collector is directly proportional to the current passed into the base. When the BD744B-S is operating in its active region, the base-emitter voltage (BE) must be greater than 0.7V. In the active region, the transistor acts as an amplifier with a gain dependent on the ratio of Collector current to Base current (IC/IB).Conclusion
The BD744B-S is a high voltage, high power NPN bipolar junction transistor. It is suitable for applications such as HVAC, DC/DC converters, power supplies and SCRs, as well as applications involving relays and electric motors. Its performance is enhanced by its low saturation voltage, wide temperature range and high power dissipation. The working principle of the BD744B-S is that of a N-type BJT, with two electric junctions between three layers of semiconductor material and current proportional to the current passed into the base.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description