Allicdata Part #: | BD745B-S-ND |
Manufacturer Part#: |
BD745B-S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Bourns Inc. |
Short Description: | TRANS NPN 80V 20A |
More Detail: | Bipolar (BJT) Transistor NPN 80V 20A 3.5W Through... |
DataSheet: | BD745B-S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 20A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 5A, 20A |
Current - Collector Cutoff (Max): | 1µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 5A, 4V |
Power - Max: | 3.5W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-218-3 |
Supplier Device Package: | SOT-93 |
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BD745B-S is a type of transistor manufactured by Panasonic, belonging to Bipolar (BJT) type and Single categorization. It is also referred to as an NPN transistor, utilizing high current gains (hFE). This device is specifically designed with fixed bias circuits, audio amps and VHF amps and various other electronic elements. The various features of this device are low collector to emitter saturation voltage (VCE(sat)), high hFE and high collector current (IC). As such, the important parameters and specifications of this device are that it has a collector to base voltage (VCB) of up to 700V, a collector current (IC) of up 8A and a collector to emitter voltage (VCE) of up to 80V.
The working principle of this device is based on the PN junction, which is a diode formed when two types of semi-conductive materials come in contact. In the case of this device, N type materials are surrounded by a P type material. This action creates a depletion layer around the N type material, giving us an NPN transistor structure.
When an external source of electric current is applied to the base terminal of an NPN transistor, the bias voltage thus created at the base-emitter junction increases and the positive voltage created at the base is able to create a relatively stable current at the collector. This current is proportional to the frequency of voltage applied to the external source. In short, the collector current is controlled with the voltage applied to the base terminal.
When the external source of electric current is removed, the current in the collector terminal decreases and eventually goes to zero. This phenomenon is due to the fact that the collector current decreases with the application of a low voltage across the collector and emitter terminals. This is known as reverse biasing and is the main reason that the collector current decreases.
When considering the application field of BD745B-S transistors, these devices are used in various linear amplifiers such as audio amps, VHF amps and others. These are also used in linear operational amplifiers and other integrated transistors to obtain resistors, switches and diode combinations. They are also used for fixed bias circuits, forming amplifiers and other linear circuits where high current gain and low saturation voltage is required.
The BD745B-S transistor is also used in various industrial circuit designs, automotive circuit designs and consumer electronic products such as mobile phones, digital cameras and other devices. Another important use of this device is in biasing built-in circuits when there is a need to control current gain.
In conclusion, BD745B-S transistors are special utility transistors that have high current gains and low saturation voltage. These devices are extremely reliable and can be easily installed in various circuit designs. They are predominantly used in the automotive, consumer electronics and industrial sector for various application fields. Thanks to their low saturation voltage and high current gains, these devices are used in amplifiers and other linear circuit designs.
The specific data is subject to PDF, and the above content is for reference
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