BD900A-S Allicdata Electronics
Allicdata Part #:

BD900A-S-ND

Manufacturer Part#:

BD900A-S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Bourns Inc.
Short Description: TRANS PNP DARL 80V 8A
More Detail: Bipolar (BJT) Transistor PNP - Darlington 80V 8A ...
DataSheet: BD900A-S datasheetBD900A-S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 16mA, 4A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Description

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Introduction

BD900A-S is a type of bipolar junction transistor (BJT), also known as bipolar technology. It belongs to the single type of BJT, as it has only one base-collector region and an additional diode. It is able to provide a high current gain, high breakdown voltage and low power consumption. BD900A-S is widely used in various applications, such as automotive and consumer electronics.

Application Field

The BD900A-S is used for a wide variety of applications. It is often chosen over other transistors due to its low power consumption and high current gain. It is ideal for use in automotive and consumer electronic applications. It is widely used in motor control, solid-state power supplies, audio power amplifiers, high-end audio amplifiers, voltage-controlled oscillators, switching circuits, and high precision analog circuitry.

Working Principle

The BD900A-S uses a base-emitter junction to conduct current from the collector to the emitter. The current gain is determined by the ratio of the collector current to the base current. It has a high input voltage and output current gain, which result in a low power consumption and a high current operation. Furthermore, its breakdown voltage is typically over 400V.

The operation of the BD900A-S is based on the well-known three terminal configuration that is used in BJT transistors. The base terminal is connected to the emitter and the collector, while the base and collector current meters measure the current flow through the transistor. The BD900A-S has a built-in diode that creates a reverse biased junction at the base-collector junction. This diode helps control the collector current and limits the amount of current flowing through the transistor.

Conclusion

The BD900A-S is a popular single BJT transistor which is used in a wide variety of industrial, automotive, and consumer electronic applications. It provides a high current gain, low power consumption, and high breakdown voltage. Its working principle is based on the three terminal configuration, with a built-in diode for reverse bias. As a result, it is a reliable and popular transistor for many applications.

The specific data is subject to PDF, and the above content is for reference

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