Allicdata Part #: | BD901-S-ND |
Manufacturer Part#: |
BD901-S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Bourns Inc. |
Short Description: | TRANS NPN DARL 100V 8A |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 100V 8A ... |
DataSheet: | BD901-S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 12mA, 3A |
Current - Collector Cutoff (Max): | 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 750 @ 3A, 3V |
Power - Max: | 2W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BD901-S is a dedicated type of bipolar junction transistor (BJT), specifically designed for use in high-frequency circuits. This kind of transistor is suitable for a wide range of applications, and it is commonly used in power amplifiers, amplifier stages, switching applications, signal and signal filters and amplifiers, and baseband data transmission. It is highly stable, provides excellent power and voltage ratings, and offers excellent linearity under high-frequency and low signal levels.
The unique design of the BD901-S allows it to realize low on-state resistance and provide excellent semiconductor performance. In addition, this transistor is also optimized to reduce power losses while operating at high frequencies. This helps to provide better overall performance and stability in high-frequency applications.
The working principle of the BD-901-S is the same as other bipolar transistors, which involves the application of a voltage to the gate of the device to create a current path between the source and the drain. This is accomplished through the use of Silicon semiconductor technology, and by controlling the current path through the use of a collector, base, and emitter. By controlling the amount of current, the voltage of the device can be adjusted and manipulated in order to produce the desired outputs.
The BD-901-S has a wide range of applications, including signal and signal filters and amplifiers, power amplifiers, amplifier stages, and baseband data transmission. It is also highly stable, providing excellent power and voltage ratings, and offers excellent linearity under high-frequency and low signal levels. Its unique design also allows it to reduce power losses while operating at high frequencies, providing better overall performance and stability.
Overall, the BD-901-S is a reliable and versatile transistor, offering excellent performance and stability in a wide range of applications. It is a highly stable device with excellent power and voltage ratings, and excellent linearity under high-frequency and low signal levels, making it an ideal choice for power amplifier, amplifier stages, switching applications, signal and signal filters, and baseband data transmission.
The specific data is subject to PDF, and the above content is for reference
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