BDT60-S Allicdata Electronics
Allicdata Part #:

BDT60-S-ND

Manufacturer Part#:

BDT60-S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Bourns Inc.
Short Description: TRANS PNP DARL 60V 4A
More Detail: Bipolar (BJT) Transistor PNP - Darlington 60V 4A ...
DataSheet: BDT60-S datasheetBDT60-S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Description

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A BDT60-S is a single bipolar transistor — also known as a BJT, or Bipolar Junction Transistor — which is widely used in applications that require a voltage or current amplification. It is typically used in circuits that require a heavy load capacity, a linear current gain and a wide dynamic range. This article will discuss the application field and working principle of this type of transistor.

The BDT60-S is a NPN transistor designed to handle very large voltage and power ratings. The maximum collector-emitter voltage of this transistor is up to 60V, with a maximum collector current of 6A. It is a popular choice among audio amplifier manufacturers as it can handle high power and voltage loads without any significant heating. Depending on the application in hand, the BDT60-S can be used in combination with other transistors to provide even higher power ratings.

The field of applications of the BDT60-S is broad. It is widely used in audio amplifiers — particularly field-effect audio amplifiers - as well as motor control circuits, electronic switch regulators, current source circuits and digital circuits. Its high-voltage, high-current ratings make it particularly well-suited for these types of applications.

The working principle of this type of transistor is relatively simple. It is based on the concept of ‘majority carriers’. Majority carriers are a key element in the design of transistors, as they allow electrical current to be amplified. In a NPN transistor, the majority carriers are electrons, while in a PNP transistor they are holes. When a current is applied to the base terminal of the transistor, the majority carriers are attracted to the base, where they accumulate. This creates a low resistance path between the collector and emitter and you can increase the current flow through the transistor.

This type of transistor also utilises another concept known as ‘depletion capacitance’. Depletion capacitance is a phenomenon that occurs when the majority carriers accumulate in the base region of the transistor. This leads to a decrease in the electron flux in the region, creating an additional barrier to the electrons that are trying to pass through the transistor. This results in an increased current gain and voltage gain at the output of the transistor, leading to an amplified output voltage.

In summary, the BDT60-S is a single bipolar transistor that is widely used in applications that require high voltage and power ratings. It utilises the principle of majority carriers and depletion capacitance to provide an amplified output voltage, making it a popular choice among audio amplifier manufacturers. Its application field is broad and it can be used in combination with other transistors to provide even higher power ratings.

The specific data is subject to PDF, and the above content is for reference

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