Allicdata Part #: | BDT61-S-ND |
Manufacturer Part#: |
BDT61-S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Bourns Inc. |
Short Description: | TRANS NPN DARL 60V 4A |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 60V 4A ... |
DataSheet: | BDT61-S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 6mA, 1.5A |
Current - Collector Cutoff (Max): | 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 750 @ 1.5A, 3V |
Power - Max: | 2W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
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BDT61-S transistors are widely used in the electronics industry. They are among the most dependable of all transistors and are widely used in consumer and professional applications. This article aims to introduce BDT61-S application fields and working principles, allowing the reader to gain a better understanding of this transistor.
BDT61-S belongs to a type of transistor called Bipolar Junction Transistor (BJT). It is also referred to as a single-stage transistor which is a type of imaging device. This type of device is composed of two PN-type semiconductor junctions connected in series with one another, which allows for current and voltage amplification.
The BDT61-S is primarily used in switching applications and DC amplifiers. This transistor has a very high voltage rating, which makes it an ideal choice for switching circuits where high voltages are needed. It is also commonly used in audio amplifiers to provide increased frequency response and dynamic range. Additionally, this transistor is also used in power supplies and voltage controllers.
The BDT61-S is a uni-polar device and is extremely sensitive to temperature changes, which makes it a perfect choice in switching circuits. Its high gain and wide bandwidth make it well suited for high-frequency applications and wireless communication systems. Additionally, due to its high performance and cost-effectiveness, the BDT61-S is also used in medical applications.
The BDT61-S is based on the NPN topology which consists of two N-type and one P-type semiconductor layers. Each layer is connected to its respective terminals, labelled “Collector”, “Base”, and “Emitter”. Current amplification is achieved by creating a barrier between the “Collector” and “Base”, allowing to “Punch-through” voltage. This barrier is known as the “Junction Drain Voltage” or JVD for short. When the “Base” voltage is higher than the JVD, the Collector current start flowing and the transistor amplifies the current.
The BDT61-S transistor is a reliable and dependable transistor that is well suited for a variety of applications. It is particularly popular in switching circuits due to its high voltage resistance and outstanding performance. Additionally, its versatility makes it well suited for a variety of applications including DC amplifiers, audio amplifiers, power supplies, and medical applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BDT61A-S | Bourns Inc. | 0.0 $ | 1000 | TRANS NPN DARL 80V 4ABipo... |
BDT61B-S | Bourns Inc. | 0.0 $ | 1000 | TRANS NPN DARL 100V 4ABip... |
BDT61C-S | Bourns Inc. | 0.0 $ | 1000 | TRANS NPN DARL 120V 4ABip... |
BDT61-S | Bourns Inc. | 0.0 $ | 1000 | TRANS NPN DARL 60V 4ABipo... |
BDT60B-S | Bourns Inc. | 0.0 $ | 1000 | TRANS PNP DARL 100V 4ABip... |
BDT60C-S | Bourns Inc. | 0.0 $ | 1000 | TRANS PNP DARL 120V 4ABip... |
BDT60-S | Bourns Inc. | 0.0 $ | 1000 | TRANS PNP DARL 60V 4ABipo... |
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