BDT61A-S

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	4A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	2.5V @ 6mA, 1.5A
Current - Collector Cutoff (Max):	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	750 @ 1.5A, 3V
Power - Max:	2W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220

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IntroductionBDT61A-S is a single bipolar junction transistor (BJT) commonly used for power switching and control in medium power applications. It has a wide range of applications including in amplifiers, rectifiers, and clippers.FeaturesThe BDT61A-S has a simple structure, consisting of a single PN junction that can operate in either voltage or current mode. It has an on-resistance (Rd) of 0.3 Ω, which is lower than many other similar BJTs. It also has an avalanche feature, which raises the collector to emitter voltage (Vce) to over 25V, ensuring that the transistor will not be damaged by high voltages. The maximum forward current is also higher than other BJTs, reaching up to 110 A.ApplicationsThe BDT61A-S is most commonly used in DC-DC converters, which convert between direct current (DC) and alternating current (AC). The transistor can be used to switch the power output on and off and to regulate the voltage and current output.It is also used in amplifiers and rectifiers, where it is used to regulate the input and output of the circuit. The avalanche feature makes the BDT61A-S an ideal choice for clippers, as it will not be damaged when the input voltage exceeds 25V.Finally, it is also commonly used in high-power DC motors, where it is used to control the motors speed and torque.Working PrincipleThe working principle of the BDT61A-S is based on two processes: N-type conduction and P-type conduction. The conduction process involves electrons (N-type) and holes (P-type) travelling through the PN junction to create a current.When a voltage is applied to the BDT61A-S, the N-type conduction process is triggered and electrons flow from the base to the emitter. At the same time, the P-type conduction process is activated, and holes start to flow from the collector to the emitter.The current that flows between the collector and the emitter is directly proportional to the voltage applied to the base. This current can be controlled by adjusting the voltage applied to the base, allowing for precise regulation of the transistor’s power output.ConclusionThe BDT61A-S is a versatile single bipolar junction transistor (BJT) that can be used in a wide range of applications. It has an on-resistance of 0.3Ω, an avalanche feature, and a maximum forward current of 110A. It is most commonly used in DC-DC converters, amplifiers and rectifiers, clippers, and high-power DC motors. Its working principle is based on N-type conduction and P-type conduction, and its current is controlled by adjusting the voltage applied to the base.

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