BDT61B-S

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BDT61B-S Application Field and Working Principle

The BDT61B-S belongs to the single bipolar junction transistor (BJT) category. It was designed for low power amplifier and switching applications. The BDT61B-S is a silicon PNP transistor designed for use in low-power amplifiers and switching circuits. The internal structure of the BDT61B-S adopts an advanced complementary bipolar technology.

BDT61B-S typically has a collector-emitter breakdown voltage of at least -45V, a collector current of -200mA, and a power dissipation (PD) of 1.2W. It also exhibits a high hFE, low noise, and high gain bandwidth product. Due to its excellent performance, the BDT61B-S has a wide application range and can be used in audio amplifiers, audio buffers, general-purpose and low-power amplifiers, power switching, and power supply circuits.

Regarding the working principle, BDT61B-S is a bipolar transistor that operates based on the controlling of the electric current in two leads, the general collector (C) and the general emitter (E). This type of transistor consists of three layers of semiconductor material, with each layer having different types of Charge carriers. The middle layer, known as the base, acts as a gate between the emitter and collector regions. Depending on the type of transistor, the base can either be Positively charged, N-type, and the emitter and collector are negatively charged, P-type, or it can be reversed.

When the voltage decreases on the base, the current increases from the collector to the emitter and decreases from the emitter to the collector. The base current multiplied by the gain is the current flowing from the collector to the emitter. Not only does the current in the base control the current in the emitter and collector, but it also controls the input-output characteristics of the amplifier. The current gain of the transistor, also known as the common-emitter current gain or hFE, is a measure of the amount of current in the collector compared to the base.

Due to its good linearity, the BDT61B-S is ideal for use in low power amplifier and switching applications. Its low noise, high hFE, and high gain bandwidth product make it a popular choice in audio amplifiers, audio buffers, general-purpose amplifiers, power switching, and power supply circuits.

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