BDT60C-S

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The BDT60C-S is a prominent single bipolar junction transistor (BJT) designed for various applications. It features a maximum collector-emitter voltage of 200V, a maximum collector current of 4A and an operating temperature range from -65°C to +150°C. Through its unique design and multifunctional capability, the BDT60C-S is ideal for use in many areas like medical suction systems, power supplies, controlled rectifiers and inverters.

The BDT60C-S utilizes a three-terminal structure composed of an emitter, a collector and a base. The collector is made up of silicon material that is connected to the external load. The emitter is also made from silicon and is connected to the base. It is responsible for the CB junction whose output is the current. The base is a semiconductor material which is the control point of the transistor. It determines the amount of current flowing from the collector to the emitter. The BDT60C-S also has integrated shielding layers which shields the collector-emitter and base junctions from ambient interference.

The primary use of a bipolar transistor is amplification, as well as switching and current flow control. Amplification occurs when a small input current flows into the base and a much larger collector current flows out. The current amplification is determined by the ratio of the collector current to the base current. This ratio is known as the current gain or DC current amplification factor, and is represented by the formula h_fe. The higher the h_fe value, the higher the current amplification. In addition to DC current amplification, the BDT60C-S can also perform AC current amplification. AC amplification, or AC current gain, is represented by the gain-bandwidth product, or h_f.

Switching is a type of current control where a transistor is used to switch a load between two states, either on or off. This is a functi

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