BDV64B Discrete Semiconductor Products |
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Allicdata Part #: | BDV64B-ND |
Manufacturer Part#: |
BDV64B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP DARL 100V 10A TO-218 |
More Detail: | Bipolar (BJT) Transistor PNP - Darlington 100V 10A... |
DataSheet: | BDV64B Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP - Darlington |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 2V @ 20mA, 5A |
Current - Collector Cutoff (Max): | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 5A, 4V |
Power - Max: | 125W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-218-3 |
Supplier Device Package: | SOT-93 |
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BDV64B Application Field and Working Principle
The BDV64B is a compact, high-power, high-voltage NPN bipolar transistor. It is ideal for applications such as power switching, linear amplification and circuit protection.
The BDV64B consists of a silicon NPN transistor, with an internal power transistor current source and a collector-base diode. The collector-base diode is connected with the collector and emitter-base junctions and provides an efficient way to control the collector current.
The BDV64B is designed for use with supply voltages of up to 65V and has a power rating of up to 18 Watts. It has an operating temperature range of -40°C to +85°C.
Working Principle
The working principle of the BDV64B is based on the NPN bipolar transistor. When a base current IB is applied, a collector-emitter current IC can be generated, which is related to the base current by the common-emitter current gain β.
At the same time, the current source connected to the base, provides a constant current source IP to the base, which is related to the collector current IC by the current gain beta as IP=Beta x IC. Thus, the collector current IC can be controlled by the base current IB.
The collector-base diode of the BDV64B is a constant-current diode which allows the collector current to be controlled without the need for additional external devices or components.
Applications
The BDV64B is well suited for a wide range of applications due to its high-power, high-voltage and thermal stability. It can be used for power switching for motor control, as a buffer for audio or video amplifiers or in audio power amplifiers and power amplifiers for instrumentation and medical applications.
The BDV64B can also be used in linear amplifier circuits, voltage regulator circuits and in power supplies. In addition, it can be used as a reliable circuit protection device in automotive applications.
The BDV64B is an ideal choice for a range of high-power and high-voltage applications which require high reliability and thermal stability.
The specific data is subject to PDF, and the above content is for reference
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