Allicdata Part #: | BDV65B-S-ND |
Manufacturer Part#: |
BDV65B-S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Bourns Inc. |
Short Description: | TRANS NPN DARL 100V 12A |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 100V 12A... |
DataSheet: | BDV65B-S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 12A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 2V @ 20mA, 5A |
Current - Collector Cutoff (Max): | 2mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 5A, 4V |
Power - Max: | 3.5W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-218-3 |
Supplier Device Package: | SOT-93 |
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Single Transistors - Bipolar (BJT) consist of three semiconductor layers and are commonly referred to as bipolar junction transistors (BJTs). BDV65B-S application field and working principle is among them. This device features a planar double-diffused structure, high gain, and balanced current spread.
BDV65B-S transistors are widely used in amplifier applications due to their large current gain and low saturation voltage. These transistors are robust and provide excellent noise immunity, making them suitable for signal processing applications. The main application areas of BDV65B-S transistors include amplifiers, mixers, oscillators, signal conditioning, and signal switching, among others.
The working principle of BDV65B-S transistors is based on the three layers of semiconductor material which form the transistor. A small current applied to one of the layers (the \'base\') controls the flow of current between the two other layers (the \'emitter\' and \'collector\'). When the base current is increased, the emitter-collector current increases as well.
In the case of the BDV65B-S transistors, a larger base current translates to a higher gain and improved signal conditioning. This is due to the fact that the BDV65B-S transistors feature a planar double-diffused structure and a balanced current spread across the base-emitter junction and the collector-base junction. This helps reduce the effects of junction capacitance, resulting in an improved current gain and better signal conditioning.
The main advantages of the BDV65B-S transistors include robustness, high gain, balanced current spread, and low saturation voltage. These features enable the transistors to provide excellent noise immunity, and make them suitable for many applications like amplifiers, mixers, oscillators, signal conditioning, and signal switching.
In conclusion, the BDV65B-S transistors are widely used in many applications due to their robustness, high gain, balanced current spread, and low saturation voltage. The transistors offer excellent noise immunity, making them suitable for signal processing applications such as amplifiers, mixers, oscillators, signal conditioning, and signal switching.
The specific data is subject to PDF, and the above content is for reference
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