BDV65B-S Allicdata Electronics
Allicdata Part #:

BDV65B-S-ND

Manufacturer Part#:

BDV65B-S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Bourns Inc.
Short Description: TRANS NPN DARL 100V 12A
More Detail: Bipolar (BJT) Transistor NPN - Darlington 100V 12A...
DataSheet: BDV65B-S datasheetBDV65B-S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 12A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 2V @ 20mA, 5A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Power - Max: 3.5W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-218-3
Supplier Device Package: SOT-93
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Single Transistors - Bipolar (BJT) consist of three semiconductor layers and are commonly referred to as bipolar junction transistors (BJTs). BDV65B-S application field and working principle is among them. This device features a planar double-diffused structure, high gain, and balanced current spread.

BDV65B-S transistors are widely used in amplifier applications due to their large current gain and low saturation voltage. These transistors are robust and provide excellent noise immunity, making them suitable for signal processing applications. The main application areas of BDV65B-S transistors include amplifiers, mixers, oscillators, signal conditioning, and signal switching, among others.

The working principle of BDV65B-S transistors is based on the three layers of semiconductor material which form the transistor. A small current applied to one of the layers (the \'base\') controls the flow of current between the two other layers (the \'emitter\' and \'collector\'). When the base current is increased, the emitter-collector current increases as well.

In the case of the BDV65B-S transistors, a larger base current translates to a higher gain and improved signal conditioning. This is due to the fact that the BDV65B-S transistors feature a planar double-diffused structure and a balanced current spread across the base-emitter junction and the collector-base junction. This helps reduce the effects of junction capacitance, resulting in an improved current gain and better signal conditioning.

The main advantages of the BDV65B-S transistors include robustness, high gain, balanced current spread, and low saturation voltage. These features enable the transistors to provide excellent noise immunity, and make them suitable for many applications like amplifiers, mixers, oscillators, signal conditioning, and signal switching.

In conclusion, the BDV65B-S transistors are widely used in many applications due to their robustness, high gain, balanced current spread, and low saturation voltage. The transistors offer excellent noise immunity, making them suitable for signal processing applications such as amplifiers, mixers, oscillators, signal conditioning, and signal switching.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "BDV6" Included word is 16
Part Number Manufacturer Price Quantity Description
BDV64 Central Semi... 0.0 $ 1000 POWER TRANSISTOR PNP TO21...
BDV64A Central Semi... 0.0 $ 1000 POWER TRANSISTOR PNP TO21...
BDV65 Central Semi... 0.0 $ 1000 POWER TRANSISTOR NPN TO21...
BDV65A Central Semi... 0.0 $ 1000 POWER TRANSISTOR NPN TO21...
BDV64B ON Semicondu... 0.0 $ 1000 TRANS PNP DARL 100V 10A T...
BDV65B ON Semicondu... 0.0 $ 1000 TRANS NPN DARL 100V 10A T...
BDV65B-S Bourns Inc. 0.0 $ 1000 TRANS NPN DARL 100V 12ABi...
BDV65C-S Bourns Inc. 0.0 $ 1000 TRANS NPN DARL 120V 12ABi...
BDV65-S Bourns Inc. 0.0 $ 1000 TRANS NPN DARL 60V 12ABip...
BDV65A-S Bourns Inc. 0.0 $ 1000 TRANS NPN DARL 80V 12ABip...
BDV64B-S Bourns Inc. 0.0 $ 1000 TRANS PNP DARL 100V 12ABi...
BDV64C-S Bourns Inc. 0.0 $ 1000 TRANS PNP DARL 120V 12ABi...
BDV64-S Bourns Inc. 0.0 $ 1000 TRANS PNP DARL 60V 12ABip...
BDV64A-S Bourns Inc. 0.0 $ 1000 TRANS PNP DARL 60V 12A SO...
BDV65BG ON Semicondu... 1.3 $ 359 TRANS NPN DARL 100V 10A T...
BDV64BG ON Semicondu... 1.31 $ 134 TRANS PNP DARL 100V 10A T...
Latest Products
BC807-16W/MIX

GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...

BC807-16W/MIX Allicdata Electronics
CP547-MJ11015-CT

TRANS PNP DARL 30A 120V DIEBipolar (BJT)...

CP547-MJ11015-CT Allicdata Electronics
CP547-CEN1103-WS

TRANS PNP DARLINGTON DIEBipolar (BJT) Tr...

CP547-CEN1103-WS Allicdata Electronics
TIP35C SL

TRANS GENERAL PURPOSE TO-218Bipolar (BJT...

TIP35C SL Allicdata Electronics
JAN2N3634

TRANS PNP 140V 1ABipolar (BJT) Transisto...

JAN2N3634 Allicdata Electronics
BULB7216-1

TRANS NPN 700V 3A I2PAKBipolar (BJT) Tra...

BULB7216-1 Allicdata Electronics