BDV65C-S

Transistors - Bipolar (BJT) - Single

BDV65C-S transistor is a single NPN bipolar junction transistor (BJT). It is mainly used as a switch or amplifier in different applications. This device is made of a semiconductor material or P-type silicon, and it functions when the electrical current travels through its body. The BDV65C-S transistor features a maximum power dissipation of 1.05W and a voltage range from 40V to 65V. This high-voltage transistor can be used in various application fields such as automotive, off-highway, lithium-ion battery management and energy harvesting systems.

Working Principle

The BDV65C-S transistor operates as a switch when its base terminal is forward biased and as an amplifier when it is reverse biased. To understand its working principle, let us first take a look at the internals of the transistor. Inside the P-type silicon material, there are three terminals or layers, namely the base, collector and emitter. When current flows through the base terminal, it is amplified through the other two terminals. The collector current is typically higher in magnitude than the base current due to the gain of the transistor, i.e., ratio of collector current to base current. Depending on the bias voltage or current on the base, the amount of collector current is controlled.

Application Field

Due to its high-voltage capability and wide gain range, the BDV65C-S transistor can be used in a variety of applications. For example, it can be used as a switch in automotive ignition systems, off-highway vehicles, energy harvesting systems and lithium-ion battery management. It can also be used in power amplifier applications due to its high voltage ratings. The BDV65C-S transistor is known to feature high reliability, low leakage current, wide temperature range and minimal processing costs. All of these features make it an ideal choice for various application fields.