BDV64C-S Allicdata Electronics
Allicdata Part #:

BDV64C-S-ND

Manufacturer Part#:

BDV64C-S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Bourns Inc.
Short Description: TRANS PNP DARL 120V 12A
More Detail: Bipolar (BJT) Transistor PNP - Darlington 120V 12A...
DataSheet: BDV64C-S datasheetBDV64C-S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 12A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 2V @ 20mA, 5A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Power - Max: 3.5W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-218-3
Supplier Device Package: SOT-93
Description

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Transistors - Bipolar (BJT) - Single is one of the most common types of electronic devices. The BDV64C-S is a single transistor in this category that is suitable for use in many different applications. Its common use is in audio and display systems, but it can also be used in power and other fields. In this article, we will discuss the application field and working principle of the BDV64C-S.

The BDV64C-S is a NPN silicon transistor that is capable of handling up to 40V of voltage, and it can power up to 1A. It is commonly used in audio applications, where it is used to amplify audio signals, as well as in display systems, where it is used to drive displays. It is also used in many industrial and power applications, where it is used to regulate voltages and currents. It is typically used in the ouput stages of power amplifiers, in drive circuits and motor control circuits, and in transistors exchanges.

The BDV64C-S has a bandwidth of 300MHz and a high temperature coefficient, which makes it ideal for high speed and temperature sensitive applications. It is also very reliable and can withstand up to 65 watts of continuous power, which makes it suitable for a variety of applications.

The working principle of the BDV64C-S is based on the NPN process. This is a process that involves the use of two different types of semiconductor materials, which are combined to form an NPN transistor. This process creates a junction between the two semiconductor materials and causes an electric current to flow between them. This electric current is then used to control the output of the transistor.

The BDV64C-S is an ideal choice for a variety of applications, due to its wide range of features. It is capable of handling up to 40V of voltage, and is also able to handle a continuous power of up to 65 watts. It has a wide bandwidth of 300MHz, and a high temperature coefficient, making it suitable for high speed and temperature sensitive applications. Additionally, it is very reliable and can withstand up to 65 watts of continuous power.

In conclusion, the BDV64C-S is a single transistor that is suitable for many different types of applications. It is capable of handling up to 40V of voltage, and is able to handle a continuous power of up to 65 watts. It has a wide bandwidth of 300MHz, and a high temperature coefficient, making it suitable for high speed and temperature sensitive applications. Additionally, it is very reliable and can withstand up to 65 watts of continuous power. The working principle of the BDV64C-S is based on the NPN process, which involves the use of two different types of semiconductor materials. The BDV64C-S is an ideal choice for many different types of applications, due to its wide range of features.

The specific data is subject to PDF, and the above content is for reference

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