BDV65 Allicdata Electronics
Allicdata Part #:

BDV65-ND

Manufacturer Part#:

BDV65

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: POWER TRANSISTOR NPN TO218
More Detail: Bipolar (BJT) Transistor NPN 60V 12A 60MHz 125W Th...
DataSheet: BDV65 datasheetBDV65 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 12A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: --
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Power - Max: 125W
Frequency - Transition: 60MHz
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-218-3
Supplier Device Package: TO-218
Description

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The BDV65 is a type of bipolar junction transistor (BJT). It is designed for use in a variety of electronic circuits, offering high voltage and power gain. This article will discuss the BDV65\'s fields of application and its working principle.

Main Applications
The BDV65 is typically employed as an amplifier in television and other consumer electronics. It is also used in some industrial, military and laboratory applications. In particular, the device is favored for its high voltage gain, which allows it to function when higher supply voltages are required. Moreover, its high power gain given the low-power requirement makes the BDV65 an excellent choice for many applications.

Working Principle
At its core, the BDV65 is a three-layer BJT consisting of two p-type and one n-type semiconductors. BJTs are known as current amplifiers, meaning that a small input current controls a significantly larger output current. In the case of the BDV65, an input current controls the current flow between the two p-type semiconductors, resulting in an output current that can be much larger than the input. This working principle is what gives the BDV65 its power gain characteristics.

The BDV65 also features a high voltage gain. This is achieved through the use of a high voltage switch, which can be activated when a certain input current is present. This, in turn, allows a large voltage to be switched into the device, resulting in a large output voltage. This is why the BDV65 is well-suited to applications that require a large voltage.

In addition to its current and voltage gain characteristics, the BDV65 also features a low on-state resistance. This means that it can achieve a high power efficiency even when operating at low supply voltages. This is especially useful for applications that require high power efficiency.

Conclusion
The BDV65 is a versatile bipolar junction transistor (BJT) designed for use in a variety of electronic circuits. It offers high power and voltage gains, as well as low on-state resistance, making it ideal for applications that require high voltage, high power efficiency and/or low power consumption. This article has discussed the applications and working principle of the BDV65.

The specific data is subject to PDF, and the above content is for reference

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